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Description

The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of 55 ns (VCC= 4.5V to 5.5V). The power dissipation over the industrial temperature range with VCC= 2.7V to 3.6V is 72 mW and is 110 mW with VCC= 4.5V to 5.5V.

Features

? Single Supply for Read and Write: 2.7V to 5.5V

? Fast Read Access Time – 70 ns (VCC= 2.7V to 3.6V); 55 ns (VCC= 4.5V to 5.5V)

? Internal Program Control and Timer

? Flexible Sector Architecture

– One 16K Bytes Boot Sector with Programming Lockout

– Two 8K Bytes Parameter Sectors

– Eight Main Memory Sectors (One 32K Bytes, Seven 64K Bytes)

? Fast Erase Cycle Time – 8 Seconds

? Byte-by-Byte Programming – 10 μs/Byte Typical

? Hardware Data Protection

? DATAPolling or Toggle Bit for End of Program Detection

? Low Power Dissipation

– 20 mA Active Current

– 25 μA CMOS Standby Current for VCC= 2.7V to 3.6V

– 30 μA CMOS Standby Current for VCC= 4.5V to 5.5V

? Minimum 100,000 Write Cycles