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DESCRIPTION

The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.

FEATURES

As a remote variable resistor

? ≤ 100? to ≥ 300 M?

? ≥ 99.9 linearity

? ≤ 15 pF shunt capacitance

? ≥ 100 G? I/O isolation resistance

As an analog switch

? Extremely low offset voltage

? 60 Vpk-pk signal capability

? No charge injection or latch-up

? ton, toff ≤ 15 μS

? UL recognized (File #E90700)

? VDE recognized (File #E94766)

– Ordering option ‘300’ (e.g. H11F1.300)

APPLICATIONS

As a variable resistor –

? Isolated variable attenuator

? Automatic gain control

? Active filter fine tuning/band switching

As an analog switch –

? Isolated sample and hold circuit

? Multiplexed, optically isolated A/D conversion