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H11D1價(jià)格
參考價(jià)格：￥1.6266
型號(hào)：H11D1 品牌：VISHAY 備注：這里有H11D1多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，H11D1批發(fā)/采購(gòu)報(bào)價(jià)，H11D1行情走勢(shì)銷售排行榜，H11D1報(bào)價(jià)。| 型號(hào) | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
H11D1 | 6-PinDIPOptoisolatorsHighVoltageTransistorOutput(300Volts) TheH11D1andH11D2consistofgalliumarsenideinfraredemittingdiodesopticallycoupledtohighvoltage,silicon,phototransistordetectorsinastandard6–pinDIPpackage.Theyaredesignedforhighvoltageapplicationsandareparticularlyusefulincopymachinesandsolidstaterelays. | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 |  |   |
H11D1 | HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 |  | |
H11D1 | HIGHVOLTAGEOPTICALLYCOUPLEDISOLATORPHOTOTRANSISTOROUTPUT DESCRIPTION TheH11DseriesofopticallycoupledisolatorsconsistofinfraredlightemittingdiodeandNPNsiliconphototransistorinastandard6pindualinlineplasticpackage. FEATURES Options:- 10mmleadspread-addGafterpartno. Surfacemount-addSMafterpart | ISOCOMISOCOM COMPONENTS 英國(guó)安數(shù)光 |  | |
H11D1 | Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage DESCRIPTION TheH11DxhasaGaAsinfraredemittingdiodeemitter, whichisopticallycoupledtoasiliconplanarphototransistor detector,andisincorporatedinaplasticDIP-6package. Itfeaturesahighcurrenttransferratio,lowcoupling capacitance,andhighisolationvoltage. Thecoup | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 |  | |
H11D1 | PropertyofLite-OnOnly FEATURES *Currenttransferratio (CTR:MIN.20atIF=10mA,VCE=10V) *Highisolationvoleagebetweeninputandoutput (Viso=5,000Vrms) *VeryHighcollector-emitterbreakdownvoltage (BVCER=300V) *Dual-in-linepackage: H11D1:1-channeltype | LITEONLite-On Technology Corporation 光寶科技光寶科技股份有限公司 |  | |
H11D1 | Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage FEATURES ?Veryhighcollectoremitterbreakdownvoltage? BVCEO=300V ?Isolationtestvoltage:5000VRMS ?Lowcouplingcapacitance ?Highcommonmodetransientimmunity ?Materialcategorization:? fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 AGENCYAPPROVALS ? | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | |
H11D1 | Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCERVoltage 文件：120.43 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | |
HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage DESCRIPTION TheH11DxhasaGaAsinfraredemittingdiodeemitter, whichisopticallycoupledtoasiliconplanarphototransistor detector,andisincorporatedinaplasticDIP-6package. Itfeaturesahighcurrenttransferratio,lowcoupling capacitance,andhighisolationvoltage. Thecoup | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | | |
HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
6-PinDIPHighVoltagePhototransistorOptocouplers Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor?typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six?pindual?in?linepackage. Fea | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 |  | | |
PropertyofLite-OnOnly FEATURES *Currenttransferratio (CTR:MIN.20atIF=10mA,VCE=10V) *Highisolationvoleagebetweeninputandoutput (Viso=5,000Vrms) *VeryHighcollector-emitterbreakdownvoltage (BVCER=300V) *Dual-in-linepackage: H11D1:1-channeltype | LITEONLite-On Technology Corporation 光寶科技光寶科技股份有限公司 | | | |
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
PropertyofLite-OnOnly FEATURES *Currenttransferratio (CTR:MIN.20atIF=10mA,VCE=10V) *Highisolationvoleagebetweeninputandoutput (Viso=5,000Vrms) *VeryHighcollector-emitterbreakdownvoltage (BVCER=300V) *Dual-in-linepackage: H11D1:1-channeltype | LITEONLite-On Technology Corporation 光寶科技光寶科技股份有限公司 | | | |
HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
6-PinDIPHighVoltagePhototransistorOptocouplers Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor?typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six?pindual?in?linepackage. Fea | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | | | |
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
6-PinDIPHighVoltagePhototransistorOptocouplers Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor?typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six?pindual?in?linepackage. Fea | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | | | |
6-PinDIPHighVoltagePhototransistorOptocouplers Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor?typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six?pindual?in?linepackage. Fea | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | | | |
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
PropertyofLite-OnOnly FEATURES *Currenttransferratio (CTR:MIN.20atIF=10mA,VCE=10V) *Highisolationvoleagebetweeninputandoutput (Viso=5,000Vrms) *VeryHighcollector-emitterbreakdownvoltage (BVCER=300V) *Dual-in-linepackage: H11D1:1-channeltype | LITEONLite-On Technology Corporation 光寶科技光寶科技股份有限公司 | | | |
6-PinDIPHighVoltagePhototransistorOptocouplers Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor?typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six?pindual?in?linepackage. Fea | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | | | |
6-PinDIPHighVoltagePhototransistorOptocouplers Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor?typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six?pindual?in?linepackage. Fea | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | | | |
6-PinDIPHighVoltagePhototransistorOptocouplers Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor?typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six?pindual?in?linepackage. Fea | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | | | |
HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
HIGHVOLTAGEOPTICALLYCOUPLEDISOLATORPHOTOTRANSISTOROUTPUT DESCRIPTION TheH11DseriesofopticallycoupledisolatorsconsistofinfraredlightemittingdiodeandNPNsiliconphototransistorinastandard6pindualinlineplasticpackage. FEATURES Options:- 10mmleadspread-addGafterpartno. Surfacemount-addSMafterpart | ISOCOMISOCOM COMPONENTS 英國(guó)安數(shù)光 | | | |
Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage FEATURES ?Veryhighcollectoremitterbreakdownvoltage? BVCEO=300V ?Isolationtestvoltage:5000VRMS ?Lowcouplingcapacitance ?Highcommonmodetransientimmunity ?Materialcategorization:? fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 AGENCYAPPROVALS ? | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | | |
Optocoupler,PhototransistorOutput,withBaseConnection,HighBVVoltage DESCRIPTION TheH11D1,H11D2,H11D3,H11D4areoptocouplerswithveryhighBVCER.TheyareintendedfortelecommunicationsapplicationsoranyDCapplicationrequiringahighblockingvoltage. TheH11D1,H11D2areidenticalandtheH11D3,H11D4areidentical. FEATURES ?CTRatIF=1 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | | |
Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage FEATURES ?Veryhighcollectoremitterbreakdownvoltage? BVCEO=300V ?Isolationtestvoltage:5000VRMS ?Lowcouplingcapacitance ?Highcommonmodetransientimmunity ?Materialcategorization:? fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 AGENCYAPPROVALS ? | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | | |
Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage FEATURES ?Veryhighcollectoremitterbreakdownvoltage? BVCEO=300V ?Isolationtestvoltage:5000VRMS ?Lowcouplingcapacitance ?Highcommonmodetransientimmunity ?Materialcategorization:? fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 AGENCYAPPROVALS ? | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | | |
Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCERVoltage 文件：120.43 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | | |
Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCERVoltage 文件：120.43 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | | |
Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCERVoltage 文件：120.43 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | | |
SealedTinyPushbuttonSwitches 文件：439.76 Kbytes Page：6 Pages | CK-COMPONENTS C&K Components |  | |
H11D1產(chǎn)品屬性
- 類型
描述
- 型號(hào)
H11D1
- 功能描述
晶體管輸出光電耦合器 HV Phototransistor
- RoHS
否
- 制造商
Vishay Semiconductors
- 輸入類型
DC
- 最大集電極/發(fā)射極電壓
70 V
- 最大集電極/發(fā)射極飽和電壓
0.4 V
- 絕緣電壓
5300 Vrms
- 電流傳遞比
100 % to 200 %
- 最大正向二極管電壓
1.65 V
- 最大輸入二極管電流
60 mA
- 最大集電極電流
100 mA
- 最大功率耗散
100 mW
- 最大工作溫度
+ 110 C
- 最小工作溫度
- 55 C
- 封裝/箱體
DIP-4
- 封裝
Bulk
| IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
23+ |
DIP6 |
9526 |
||||
MOT |
23+ |
DIP6 |
110 |
原裝現(xiàn)貨 |
|||
FAIRCILD |
22+ |
DIP-6 |
8000 |
原裝正品支持實(shí)單 |
|||
FSC |
25+ |
DIP-6 |
3000 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售 |
|||
FAIRCHILD/仙童 |
24+ |
SOP-4 |
4500 |
只做原廠渠道 可追溯貨源 |
|||
Fairchild |
600 |
公司優(yōu)勢(shì)庫(kù)存 熱賣中!! |
|||||
onsemi(安森美) |
24+ |
DIP-6 |
31277 |
正規(guī)渠道,大量現(xiàn)貨,只等你來。 |
|||
ONSEMI/安森美 |
2410+ |
DIP-6 |
100 |
原裝正品.假一賠百.正規(guī)渠道.原廠追溯. |
|||
INT |
22+ |
SOP-6 |
1000 |
全新原裝現(xiàn)貨!自家?guī)齑? |
|||
MOT或QTC |
24+ |
DIP或SMD |
10000 |
現(xiàn)貨 |
H11D1芯片相關(guān)品牌
H11D1規(guī)格書下載地址
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- H11AV1AM
- H11AG1VM
- H11AG1TVM
- H11AG1SR2M
- H11AG1SM
- H11AG1M
- H11AA4X
- H11AA4VM
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DdatasheetPDF頁碼索引
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