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IRF1010NSPBF中文資料
IRF1010NSPBF數據手冊規(guī)格書PDF詳情
Description
Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1010NL) is available for low profile applications.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
IRF1010NSPBF產品屬性
- 類型
描述
- 型號
IRF1010NSPBF
- 功能描述
MOSFET 55V 1 N-CH HEXFET 11mOhms 80nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶體管極性
N-Channel
- 汲極/源極擊穿電壓
650 V
- 閘/源擊穿電壓
25 V
- 漏極連續(xù)電流
130 A 電阻汲極/源極
- RDS(導通)
0.014 Ohms
- 配置
Single
- 安裝風格
Through Hole
- 封裝/箱體
Max247
- 封裝
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
|||
IR |
24+ |
TO263 |
28 |
只做原廠渠道 可追溯貨源 |
|||
IR |
2430+ |
TO263 |
8540 |
只做原裝正品假一賠十為客戶做到零風險!! |
|||
Infineon |
24+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應 |
|||
IR |
23+ |
TO-263 |
11846 |
一級代理商現貨批發(fā),原裝正品,假一罰十 |
|||
IR |
24+ |
D2PAK |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
|||
International Rectifier |
2022+ |
1 |
全新原裝 貨期兩周 |
||||
IR |
24+ |
65230 |
|||||
N/A |
2447 |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期排單到貨 |
|||
INFINEON |
1809+ |
TO-263 |
3675 |
就找我吧!--邀您體驗愉快問購元件! |
IRF1010NSPBF 價格
參考價格:¥3.7690
IRF1010NSPBF 資料下載更多...
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International Rectifier
International Rectifier Corporation(簡稱IRF)是一家全球領先的功率半導體制造商,成立于1947年,總部位于美國加利福尼亞州。IRF專注于開發(fā)和提供高效能的功率管理解決方案,其產品廣泛應用于汽車、工業(yè)、消費電子、航空航天、通信和計算等多個領域。公司以其功率MOSFET聞名,提供多種類型的整流二極管,包括肖特基二極管和超快恢復二極管,同時還開發(fā)IGBT(絕緣柵雙極晶體管)和電源管理IC。IRF在功率半導體領域的創(chuàng)新和技術積累為其贏得了良好的聲譽,并于2014年被英飛凌科技股份公司(Infineon Technologies AG)收購,這一收購旨在增強英飛凌在