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IRF530N中文資料
IRF530N數(shù)據(jù)手冊規(guī)格書PDF詳情
Description
Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
IRF530N產(chǎn)品屬性
- 類型
描述
- 型號
IRF530N
- 制造商
International Rectifier
- 功能描述
MOSFET N TO-220
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IRF530NSTRRPBF 價格
參考價格：￥4.5114
IRF530N 資料下載更多...
IRF530N 芯片相關(guān)型號
IRF相關(guān)芯片制造商
Datasheet數(shù)據(jù)表PDF頁碼索引
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International Rectifier
中文資料: 32181條
International Rectifier Corporation（簡稱IRF）是一家全球領(lǐng)先的功率半導(dǎo)體制造商，成立于1947年，總部位于美國加利福尼亞州。IRF專注于開發(fā)和提供高效能的功率管理解決方案，其產(chǎn)品廣泛應(yīng)用于汽車、工業(yè)、消費電子、航空航天、通信和計算等多個領(lǐng)域。公司以其功率MOSFET聞名，提供多種類型的整流二極管，包括肖特基二極管和超快恢復(fù)二極管，同時還開發(fā)IGBT（絕緣柵雙極晶體管）和電源管理IC。IRF在功率半導(dǎo)體領(lǐng)域的創(chuàng)新和技術(shù)積累為其贏得了良好的聲譽，并于2014年被英飛凌科技股份公司（Infineon Technologies AG）收購，這一收購旨在增強英飛凌在
