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IRF6613中文資料
IRF6613數(shù)據(jù)手冊規(guī)格書PDF詳情
Description
The IRF6613 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Application Specific MOSFETs
? Ideal for Synchronous Rectification in Isolated DC-DC Converters
? Low Conduction Losses
? Low Switching Losses
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
IRF6613產(chǎn)品屬性
- 類型
描述
- 型號
IRF6613
- 功能描述
MOSFET 40V N-CH HEXFET 3.4mOhms 42nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶體管極性
N-Channel
- 汲極/源極擊穿電壓
650 V
- 閘/源擊穿電壓
25 V
- 漏極連續(xù)電流
130 A 電阻汲極/源極
- RDS(導(dǎo)通)
0.014 Ohms
- 配置
Single
- 安裝風(fēng)格
Through Hole
- 封裝/箱體
Max247
- 封裝
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IRF |
16+ |
盤裝PB |
8000 |
原裝現(xiàn)貨請來電咨詢 |
|||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
|||
IRF |
24+ |
90000 |
一級代理商進(jìn)口原裝現(xiàn)貨、價格合理 |
||||
IRF6613TRPBF |
893 |
893 |
|||||
IR |
25+ |
DIRECTFET |
32360 |
IR全新特價IRF6613TR1PBF即刻詢購立享優(yōu)惠#長期有貨 |
|||
IR |
24+ |
DIRECTFET |
26391 |
只做原廠渠道 可追溯貨源 |
|||
INFINEON/IR |
15+ |
4800 |
DirectFET MT |
||||
IR |
23+ |
DIRECTFET |
90000 |
只做原裝 !全系列供應(yīng)可長期供貨穩(wěn)定價格優(yōu)勢! |
|||
IR |
23+ |
SOIC |
12500 |
全新原裝現(xiàn)貨,假一賠十 |
|||
Infineon(英飛凌) |
24+ |
DIRECTFET |
35848 |
原廠可訂貨,技術(shù)支持,直接渠道??珊灡9┖贤?/div> |
IRF6613TRPBF 價格
參考價格:¥11.5090
IRF6613 資料下載更多...
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Datasheet數(shù)據(jù)表PDF頁碼索引
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International Rectifier
International Rectifier Corporation(簡稱IRF)是一家全球領(lǐng)先的功率半導(dǎo)體制造商,成立于1947年,總部位于美國加利福尼亞州。IRF專注于開發(fā)和提供高效能的功率管理解決方案,其產(chǎn)品廣泛應(yīng)用于汽車、工業(yè)、消費(fèi)電子、航空航天、通信和計算等多個領(lǐng)域。公司以其功率MOSFET聞名,提供多種類型的整流二極管,包括肖特基二極管和超快恢復(fù)二極管,同時還開發(fā)IGBT(絕緣柵雙極晶體管)和電源管理IC。IRF在功率半導(dǎo)體領(lǐng)域的創(chuàng)新和技術(shù)積累為其贏得了良好的聲譽(yù),并于2014年被英飛凌科技股份公司(Infineon Technologies AG)收購,這一收購旨在增強(qiáng)英飛凌在