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Description

The IRF6616 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

? RoHS compliant containing no lead or bormide

? Low Profile (<0.7 mm)

? Dual Sided Cooling Compatible

? Ultra Low Package Inductance

? Optimized for High Frequency Switching

? Low Conduction and Switching Losses

? Compatible with existing Surface Mount Techniques