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Description

The MA4SW510B-1 device is a SP5T broadband switch with integrated bias network utilizing M/A-COMs HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy.

Features

? Broad Bandwidth Specified up to 18 GHz

? Usable up to 26 GHz

? Integrated Bias Network

? Low Insertion Loss / High Isolation

? Rugged, Glass Encapsulated Construction

? Fully Monolithic

Applications

These high performance switches are suitable for use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 80nS switching speeds can be achieved.