位置:NAND512W3A2CZA6E > NAND512W3A2CZA6E詳情
NAND512W3A2CZA6E中文資料
NAND512W3A2CZA6E數(shù)據(jù)手冊(cè)規(guī)格書PDF詳情
Description
The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that
uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page
family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C
have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of
a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on
whether the device has a x8 or x16 bus width.
The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or
x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate
to other densities without changing the footprint.
To extend the lifetime of NAND Flash devices it is strongly recommended to implement an
Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000
program/erase cycles for each block. A Write Protect pin is available to give a hardware
protection against program and erase operations.
Features
● High density NAND Flash memories
– 512 Mbit memory array
– Cost effective solutions for mass storage applications
● NAND interface
– x 8 or x 16 bus width
– Multiplexed Address/ Data
● Supply voltage: 1.8 V, 3.0 V
● Page size
– x 8 device: (512 + 16 spare) bytes
– x 16 device: (256 + 8 spare) words
● Block size
– x 8 device: (16 K + 512 spare) bytes
– x 16 device: (8 K + 256 spare) words
● Page Read/Program
– Random access: 12 μs (3 V)/15 μs (1.8 V) (max)
– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)
– Page Program time: 200 μs (typ)
● Copy Back Program mode
● Fast Block Erase: 2 ms (typ)
● Status Register
● Electronic signature
● Chip Enable ‘don’t care’
● Serial Number option
● Hardware Data Protection
– Program/Erase locked during Power transitions
● Data integrity
– 100,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
● ECOPACK? packages
● Development tools
– Error Correction Code models
– Bad Blocks Management and Wear Leveling algorithms
– Hardware simulation models
NAND512W3A2CZA6E產(chǎn)品屬性
- 類型
描述
- 型號(hào)
NAND512W3A2CZA6E
- 功能描述
IC FLASH 512MBIT 63VFBGA
- RoHS
是
- 類別
集成電路(IC) >> 存儲(chǔ)器
- 系列
-
- 產(chǎn)品變化通告
Product Discontinuation 26/Apr/2010
- 標(biāo)準(zhǔn)包裝
136
- 系列
- 格式 -
- 存儲(chǔ)器
RAM
- 存儲(chǔ)器類型
SRAM - 同步,DDR II
- 存儲(chǔ)容量
18M(1M x 18)
- 速度
200MHz
- 接口
并聯(lián)
- 電源電壓
1.7 V ~ 1.9 V
- 工作溫度
0°C ~ 70°C
- 封裝/外殼
165-TBGA
- 供應(yīng)商設(shè)備封裝
165-CABGA(13x15)
- 包裝
托盤
- 其它名稱
71P71804S200BQ
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Numonyx/STMi |
23+ |
63-VFBGA |
65480 |
||||
ST |
24+ |
BGA |
23000 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
|||
ST |
2016+ |
BGA |
6528 |
只做進(jìn)口原裝現(xiàn)貨!假一賠十! |
|||
ST |
2020+ |
O-NEWB |
79 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
|||
ST |
23+ |
VFBGA-55 |
5000 |
原裝正品,假一罰十 |
|||
ST |
6000 |
面議 |
19 |
DIP/SMD |
|||
ST |
24+ |
BGA |
20000 |
全新原廠原裝,進(jìn)口正品現(xiàn)貨,正規(guī)渠道可含稅??! |
|||
Micron Technology Inc. |
21+ |
78-FBGA |
5280 |
進(jìn)口原裝!長期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠信經(jīng)營 |
|||
Micron Technology Inc. |
24+ |
63-VFBGA(9x11) |
56200 |
一級(jí)代理/放心采購 |
|||
ST |
08+PBF |
BGA |
1 |
普通 |
NAND512W3A2CZA6E 資料下載更多...
NAND512W3A2CZA6E 芯片相關(guān)型號(hào)
- HM55B
- M27C2001-10XB1X
- M27C2001-15XB1X
- M27C2001-55XL1X
- M27C2001-90B1X
- MGB-128S5FC
- MGB-245M5FC
- MPXM-250105K10F
- MPXM-250125K10F
- MPXM-250824K10F
- MPXM-275185K10F
- MPXM-275684K10F
- NAND04GW4B4CN1E
- NAND08GAH0A
- NAND08GW3C2AN6E
- NAND08GW3C2AZL6E
- NAND08GW3C2BN1E
- NAND16GAH0DZA5E
- NAND16GW3C2BN6E
- NAND512W4A2CZA6F
- NCP1230D100R2
- NCP1230D133R2
- NE5534P
- PHAP3320B
- PHAP3352A
- RL-1284-3300
- RN55E2152CR36
- RN60C2494CR36
- SMC512AF
- SMCXXXBF
Datasheet數(shù)據(jù)表PDF頁碼索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
numonyx
Numonyx是一家曾經(jīng)存在的存儲(chǔ)技術(shù)公司,于2008年由英特爾(Intel)和STMicroelectronics共同創(chuàng)立。Numonyx專注于非易失性存儲(chǔ)器(NVM)技術(shù)和閃存存儲(chǔ)器技術(shù),為客戶提供各種存儲(chǔ)解決方案和產(chǎn)品。 Numonyx的產(chǎn)品包括閃存存儲(chǔ)器、嵌入式存儲(chǔ)器、非易失性存儲(chǔ)器等,在計(jì)算機(jī)、消費(fèi)電子、通信、汽車等領(lǐng)域得到廣泛應(yīng)用。公司致力于技術(shù)創(chuàng)新與研發(fā),不斷提升產(chǎn)品性能、可靠性和創(chuàng)新性,以滿足客戶不斷增長的需求。 2010年,美國存儲(chǔ)技術(shù)公司Micron Technology收購了Numonyx,并將其整合為Micron的一部分。這一收購使Micron得以拓展其存儲(chǔ)技術(shù)領(lǐng)域的產(chǎn)