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RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for W-CDMA and LTE base station applications with frequencies from 750 to 820 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

? Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =

2000 mA, Pout = 96 Watts Avg., IQ Magnitude Clipping, Channel

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01 Probability

on CCDF.

? Capable of Handling 10:1 VSWR, @ 32 Vdc, 805 MHz, 500 Watts CW Output

Power (3 dB Input Overdrive from Rated Pout), Designed for

Enhanced Ruggedness

? Typical Pout @ 1 dB Compression Point ? 340 Watts CW

Features

? 100 PAR Tested for Guaranteed Output Power Capability

? Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

? Internally Matched for Ease of Use

? Integrated ESD Protection

? Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

? Designed for Digital Predistortion Error Correction Systems

? Optimized for Doherty Applications

? In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.