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Applications

? GSM, CDMA, WCDMA, TD-SCDMA cellular infrastructure

? Ultra low-noise systems

? Balanced, single-ended low-noise amplifier designs

Features

? Extended operating temperature range: –40 ?C to +100 ?C

? Low noise figure: 0.65 dB @ 1.85 GHz

? Excellent IIP3 performance: +21.3 dBm @ 1.85 GHz

? Gain: 17.3 dB @ 1.85 GHz

? Adjustable supply current

? Integrated enable circuitry

? Temperature and process-stable active bias

? Miniature DFN (8-pin, 2 x 2 mm) package

(MSL1 @ 260 ?C per JEDEC J-STD-020)

Description

The SKY67022-396LF is GaAs, pHEMT low-noise amplifier (LNA)

with an active bias and high-linearity performance. The advanced

GaAs pHEMT enhancement mode process provides good return

loss, low noise, and high-linearity performance.

The internal active bias circuitry provides stable performance over

temperature and process variation. The device offers the ability to

externally adjust supply current and gain. Supply voltage is

applied to the RFOUT/VDD pin through an RF choke inductor.

Pin 3 (VBIAS) should be connected to RFOUT/VDD through an

external resistor to control the supply current. The RFIN and

RFOUT/VDD pins should be DC blocked to ensure proper

operation.

The SKY67022-396LF operates in the frequency range of 1.6 to

2.2 GHz. For lower and higher frequency operation, the pincompatible

SKY67021-396LF and SKY67023-396LF, respectively,

should be used.

The LNA is manufactured in a compact, 2 x 2 mm, 8-pin Dual Flat

No-Lead (DFN) package. A functional block diagram is shown in

Figure 1. The pin configuration and package are shown in

Figure 2. Signal pin assignments and functional pin descriptions

are provided in Table 1.