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Features

? High voltage rail up to 600 V

? dV/dt immunity ± 50 V/nsec in full temperature

range

? Driver current capability:

– 400 mA source

– 650 mA sink

? Switching times 70/40 nsec rise/fall with 1 nF

load

? 3.3 V, 5 V, 15 V CMOS/TTL input comparators

with hysteresis and pull-down

? Internal bootstrap diode

? Outputs in phase with inputs

? Deadtime and interlocking function

Description

The L6389E is a high voltage gate driver,

manufactured with the BCD ? “offline”

technology, and able to drive a half-bridge of

power MOSFET/IGBT devices. The high-side

(floating) section is enabled to work with voltage

rail up to 600 V. Both device outputs can sink and

source 650 mA and 400 mA respectively and

cannot be simultaneously driven high thanks to an

integrated interlocking function. Further

prevention from outputs cross conduction is

guaranteed by the deadtime function.

The L6389E device has two input and two output

pins, and guarantees the outputs switch in phase

with inputs. The logic inputs are CMOS/TTL

compatible (3.3 V, 5 V and 15 V) to ease the

interfacing with controlling devices.

The bootstrap diode is integrated in the driver

allowing a more compact and reliable solution.

The L6389E device features the UVLO protection

on both supply voltages (VCC and VBOOT)

ensuring greater protection against voltage drops

on the supply lines.

The device is available in an SO-8 tube, and tape

and reel packaging options.

Applications

? Home appliances

? Industrial applications and drives

? Motor drivers

– DC, AC, PMDC and PMAC motors

? Induction heating

? HVAC

? Factory automation

? Lighting applications

? Power supply systems