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M28W160BT100-NT中文資料
M28W160BT100-NT數(shù)據(jù)手冊規(guī)格書PDF詳情
SUMMARY DESCRIPTION
The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.
The device features an asymmetrical blocked architecture. The M28W160B has an array of 39 blocks: 8 Parameter Blocks of 4 KWord and 31 Main Blocks of 32 KWord. M28W160BT has the Parameter Blocks at the top of the memory address space while the M28W160BB locates the Parameter Blocks starting from the bottom. The memory maps are shown in Figure 6, Block Addresses.
Parameter blocks 0 and 1 can be protected from accidental programming or erasure. Each block can be erased separately. Erase can be suspended in order to perform either read or program in any other block and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles.
Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller takes care of the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
FEATURES SUMMARY
■ SUPPLY VOLTAGE
– VDD = 2.7V to 3.6V Core Power Supply
– VDDQ= 1.65V to 3.6V for Input/Output
– VPP = 12V for fast Program (optional)
■ ACCESS TIME: 70, 85, 90,100ns
■ PROGRAMMING TIME
– 10μs typical
– Double Word Programming Option
■ COMMON FLASH INTERFACE
– 64 bit Security Code
■ MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– Main Blocks
■ BLOCK PROTECTION on TWO PARAMETER BLOCKS
– WP for Block Protection
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M28W160BT: 90h
– Bottom Device Code, M28W160BB: 91h
M28W160BT100-NT產品屬性
- 類型
描述
- 型號
M28W160BT100-NT
- 制造商
STMICROELECTRONICS
- 制造商全稱
STMicroelectronics
- 功能描述
16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
STMicroelectronics |
2022+ |
481 |
全新原裝 貨期兩周 |
||||
ST/意法 |
23+ |
BGA |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
|||
ST/意法 |
23+ |
BGA |
13000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
|||
ST/意法 |
22+ |
BGA |
3000 |
原裝正品,支持實單 |
|||
ST |
99+ |
BGA |
2500 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
|||
ST |
25+ |
BGA |
4512 |
只做原裝進口!正品支持實單! |
|||
ST/意法 |
24+ |
NA/ |
2500 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
|||
ST/意法 |
02+ |
BGA |
865 |
原裝現(xiàn)貨 |
|||
ST/意法 |
2450+ |
BGA |
6540 |
只做原裝正品假一賠十為客戶做到零風險!! |
|||
ST |
24+ |
BGA |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
M28W160BT100-NT 資料下載更多...
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Datasheet數(shù)據(jù)表PDF頁碼索引
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STMicroelectronics 意法半導體集團
意法半導體 (STMicroelectronics) 成立于1987年,總部位于瑞士日內瓦和法國巴黎,是一家全球領先的半導體公司。意法半導體專注于設計、制造和銷售各種半導體解決方案,產品廣泛應用于汽車、工業(yè)、消費電子、通信等領域。 意法半導體的產品包括微控制器、模擬集成電路、功率半導體、傳感器等。公司擁有多個研發(fā)中心和生產基地,致力于技術創(chuàng)新和研發(fā)投入。意法半導體在全球范圍內擁有廣泛的客戶群和合作伙伴,為客戶提供高品質的產品和解決方案。 公司的使命是通過半導體技術推動智能化和可持續(xù)發(fā)展,助力客戶取得成功。意法半導體不僅注重商業(yè)成功,還注重社會責任、環(huán)境保護和可持續(xù)經營。企業(yè)價值觀包括創(chuàng)新、尊重