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M58BW016DB80T3FF中文資料

廠家型號(hào) | M58BW016DB80T3FF |
文件大小 | 627.94Kbytes |
頁(yè)面數(shù)量 | 69頁(yè) |
功能描述 | 16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories 16 Mbit(512 Kb x 32, boot block, burst) 3 V supply Flash memories |
數(shù)據(jù)手冊(cè) | |
簡(jiǎn)稱 | STMICROELECTRONICS【意法半導(dǎo)體】 |
生產(chǎn)廠商 | STMicroelectronics |
中文名稱 | 意法半導(dǎo)體集團(tuán)官網(wǎng) |
LOGO |
M58BW016DB80T3FF數(shù)據(jù)手冊(cè)規(guī)格書(shū)PDF詳情
Description
The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the input and output buffers. Optionally a 12 V VPP supply can be used to provide fast program and erase for a limited time and number of program/erase cycles.
The devices support Asynchronous (Latch Controlled and Page Read) and Synchronous Bus operations. The Synchronous Burst Read interface allows a high data transfer rate controlled by the Burst Clock, K, signal. It is capable of bursting fixed or unlimited lengths of data. The burst type, latency and length can be configured and can be easily adapted to a large variety of system clock frequencies and microprocessors. All writes are asynchronous. On power-up the memory defaults to Read mode with an Asynchronous Bus.
The devices have a boot block architecture with an array of 8 parameter blocks of 64 Kb each and 31 main blocks of 512 Kb each. In the M58BW016DT and M58BW016FT the parameter blocks are located at the top of the address space whereas in the M58BW016DB and M58BW016FB, they are located at the bottom.
Program and Erase commands are written to the command interface of the memory. An on chip Program/Erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified in the Status Register. The command set required to control the memory is consistent with JEDEC standards.
Features
■ Supply voltage
– VDD = 2.7 V to 3.6 V for Program, Erase and Read
– VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers
– VPP = 12 V for Fast Program (optional)
■ High performance
– Access times: 70, 80 ns
– 56 MHz effective zero wait-state Burst Read
– Synchronous Burst Read
– Asynchronous Page Read
■ Hardware block protection
– WP pin for Write Protect of the 4 outermost
parameter blocks and all main blocks
– RP pin for Write Protect of all blocks
■ Optimized for FDI drivers
– Fast Program / Erase Suspend latency time < 6 μs
– Common Flash interface
■ Memory blocks
– 8 parameters blocks (top or bottom)
– 31 main blocks
■ Low power consumption
– 5 μA typical Deep Power-down
– 60 μA typical standby for M58BW016DT/B
150 μA typical standby for M58BW016FT/B
– Automatic standby after Asynchronous Read
■ Electronic signature
– Manufacturer code: 20h
– Top device code: 8836h
– Bottom device code: 8835h
■ ECOPACK? packages available
M58BW016DB80T3FF產(chǎn)品屬性
- 類型
描述
- 型號(hào)
M58BW016DB80T3FF
- 制造商
STMICROELECTRONICS
- 制造商全稱
STMicroelectronics
- 功能描述
16 Mbit(512 Kb x 32, boot block, burst) 3 V supply Flash memories
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
QFP-80 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
|||
ST/意法 |
23+ |
QFP |
3000 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車(chē)、醫(yī)療、工業(yè)、 |
|||
ST/意法 |
24+ |
NA/ |
3375 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票 |
|||
ST |
24+ |
QFP |
5000 |
只做原裝公司現(xiàn)貨 |
|||
ST |
25+ |
QFP |
4500 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷(xiāo)售! |
|||
ST |
23+24 |
QFP |
9800 |
原裝現(xiàn)貨.優(yōu)勢(shì)熱賣(mài).終端BOM表可配單 |
|||
ST/意法 |
24+ |
QFP |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
|||
MICRON |
1844+ |
6528 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
||||
MICRON/美光 |
24+ |
NA |
20000 |
美光專營(yíng)原裝正品 |
|||
MICRON/美光 |
22+ |
NA |
8000 |
中賽美只做原裝 只有原裝 |
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STMicroelectronics 意法半導(dǎo)體集團(tuán)
意法半導(dǎo)體 (STMicroelectronics) 成立于1987年,總部位于瑞士日內(nèi)瓦和法國(guó)巴黎,是一家全球領(lǐng)先的半導(dǎo)體公司。意法半導(dǎo)體專注于設(shè)計(jì)、制造和銷(xiāo)售各種半導(dǎo)體解決方案,產(chǎn)品廣泛應(yīng)用于汽車(chē)、工業(yè)、消費(fèi)電子、通信等領(lǐng)域。 意法半導(dǎo)體的產(chǎn)品包括微控制器、模擬集成電路、功率半導(dǎo)體、傳感器等。公司擁有多個(gè)研發(fā)中心和生產(chǎn)基地,致力于技術(shù)創(chuàng)新和研發(fā)投入。意法半導(dǎo)體在全球范圍內(nèi)擁有廣泛的客戶群和合作伙伴,為客戶提供高品質(zhì)的產(chǎn)品和解決方案。 公司的使命是通過(guò)半導(dǎo)體技術(shù)推動(dòng)智能化和可持續(xù)發(fā)展,助力客戶取得成功。意法半導(dǎo)體不僅注重商業(yè)成功,還注重社會(huì)責(zé)任、環(huán)境保護(hù)和可持續(xù)經(jīng)營(yíng)。企業(yè)價(jià)值觀包括創(chuàng)新、尊重