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Features

? Power system-in-package integrating gate drivers and high-voltage power

MOSFETs

– RDS(ON) = 1.38 Ω

– BVDSS = 600 V

? Suitable for operating as

– full bridge

– dual independent half bridges

? UVLO protection on low-side and high-side

? 3.3 V to 15 V compatible inputs with hysteresis and pull-down

? Internal bootstrap diode

? Uncommitted comparators

? Adjustable dead-time

? Bill of material reduction

? Very compact and simplified layout

? Flexible, easy and fast design

Description

The PWD5F60 is an advanced power system-in package integrating gate drivers and

four N-channel power MOSFETs in dual half-bridge configuration.

The integrated power MOSFETs have RDS(ON) of 1.38 Ω and 600 V drain-source

breakdown voltage, while the embedded gate drivers high side can be easily

supplied by the integrated bootstrap diode. The high integration of the device allows

to efficiently drive loads in a tiny space.

The PWD5F60 accepts a supply voltage (VCC) extending over a wide range (10 V to

20 V) and also features UVLO protection on both the lower and upper driving

sections, preventing the power switches from operating in low efficiency or

dangerous conditions.

The input pins extended range allows easy interfacing with microcontrollers, DSP

units or Hall effect sensors.

The PWD5F60 embeds two uncommitted comparators available for protections

against overcurrent, overtemperature, etc.

The PWD5F60 operates in the industrial temperature range, -40 °C to 125 °C.

The device is available in a compact VFQFPN package.

Applications

? Industrial fans and pumps

? Cooking hoods and gas heaters

? Blowers

? Industrial drives and factory automation

? Power supply units