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TK3晶體管資料
TK30C別名：TK30C三極管、TK30C晶體管、TK30C晶體三極管
TK30C生產(chǎn)廠家：
TK30C制作材料：Ge-PNP
TK30C性質(zhì)：開關(guān)管 （SW）
TK30C封裝形式：
TK30C極限工作電壓：30V
TK30C最大電流允許值：0.1A
TK30C最大工作頻率：<1MHZ或未知
TK30C引腳數(shù)：
TK30C最大耗散功率：0.2W
TK30C放大倍數(shù)：
TK30C圖片代號(hào)：NO
TK30Cvtest：30
TK30Chtest：999900
- TK30Catest：0.1
TK30Cwtest：0.2
TK30C代換 TK30C用什么型號(hào)代替：3AG87B,
TK3價(jià)格
參考價(jià)格：￥2.4104
型號(hào)：TK30A06N1,S4X 品牌：Toshiba Semiconductor an 備注：這里有TK3多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，TK3批發(fā)/采購(gòu)報(bào)價(jià)，TK3行情走勢(shì)銷售排行榜，TK3報(bào)價(jià)。| 型號(hào) | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
TK3 | 包裝：散裝 描述：TERMINAL KIT P184 10EA T49 盒子，外殼，機(jī)架 卡機(jī)架配件 | VECTOR VECTOR ELECTRONICS and TECHNOLOGY, INC. |  |   |
TK3 | 包裝：散裝 描述：TERMINAL KIT P184 10EA T49 盒子，外殼，機(jī)架 卡機(jī)架配件 | VECTOR VECTOR ELECTRONICS and TECHNOLOGY, INC. | | |
Field Effect Transistor Silicon N Channel MOS Type SwitchingRegulatorApplications ●Lowdrain-sourceON-resistance:RDS(ON)=19m?(typ.) ●Highforwardtransferadmittance:|Yfs|=34S(typ.) ●Lowleakagecurrent:IDSS=10μA(max)(VDS=60V) ●Enhancementmode:Vth=1.3to2.5V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 |  | | |
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
Switching Voltage Regulators MOSFETsSiliconN-channelMOS(U-MOS-H) Features (1)Lowdrain-sourceon-resistance:RDS(ON)=12.2m?(typ.)(VGS=10V) (2)Lowleakagecurrent:IDSS=10μA(max)(VDS=60V) (3)Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=0.2mA) Applications ?SwitchingVoltageRegulators | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
Switching Voltage Regulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.073?(typ.)byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=1.5mA) Applications ?SwitchingVoltageRegulators | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.073Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.5mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=135ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.082Ω(typ.) byusingSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3.0to4.5V(VDS | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=135ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.082Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.073Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.5mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.078Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=1.5mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=135ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.087Ω(typ.) (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=10V,ID=1.5mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.078Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.5mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.073Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.5mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-channel MOS (U-MOS??H) 1.Applications ?Automotive ?MotorDrivers ?SwitchingVoltageRegulators 2.Features (1)AEC-Q101qualified (2)Lowdrain-sourceon-resistance:RDS(ON)=8.2mΩ(typ.)(VGS=10V) (3)Lowleakagecurrent:IDSS=10μA(max)(VDS=100V) (4)Enhancementmode:Vth=1.5to2.5V(VDS | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-channel MOS (U-MOS-H) 1.Applications ?Automotive ?SwitchingVoltageRegulators ?MotorDrivers 2.Features (1)AEC-Q101qualified (2)Lowdrain-sourceon-resistance:RDS(ON)=8.2mΩ(typ.)(VGS=10V) (3)Lowleakagecurrent:IDSS=10μA(max)(VDS=100V) (4)Enhancementmode:Vth=2.0to4.0V(VDS | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.068Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=2.1mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=130ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.08Ω(typ.) byusingSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=1 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.068Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=2.1mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=130ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.08Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS= | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
Phase Control Thyristor FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers | Dynex Dynex Semiconductor |  | | |
Phase Control Thyristor FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers | Dynex Dynex Semiconductor | | | |
Phase Control Thyristor FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers | Dynex Dynex Semiconductor | | | |
Phase Control Thyristor FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers | Dynex Dynex Semiconductor | | | |
Phase Control Thyristor FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers | Dynex Dynex Semiconductor | | | |
Phase Control Thyristor FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers | Dynex Dynex Semiconductor | | | |
Phase Control Thyristor FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers | Dynex Dynex Semiconductor | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingPowerSupplies Features (1)EasytocontrolGateswitching (2)Lowdrain-sourceon-resistance:RDS(ON)=0.3Ω(typ.) (3)Enhancementmode:Vth=2to4V(VDS=10V,ID=2.04mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.29Ω(typ.)byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.36mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.29Ω(typ.)byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.36mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.29Ω(typ.)byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.36mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.29Ω(typ.)byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.36mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=150ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.062Ω(typ.) byusingSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3.0to4.5V(VDS | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=150ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.062Ω(typ.) byusingSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS= | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.055Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.9mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.055Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.9mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=2.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 |  | | |
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=2.5A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.51Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | | | |
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=3.7Ω(typ.) (2)Lowleakagecurrent:IDSS=10μA(max)(VDS=720V) (3)Enhancementmode:Vth=2.5to4.0V(VDS=10V,ID=0.25mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=2.5A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | | | |
MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=3.9Ω(typ.) (2)Lowleakagecurrent:IDSS=10μA(max)(VDS=640V) (3)Enhancementmode:Vth=2.5to4.0V(VDS=10V,ID=0.3mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
isc N-Channel MOSFET Transistor ?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=2.5m?(typ.)(VGS=10V) ?Enhancementmode: Vth=1.4to2.4V(VDS=10V,ID=0.5mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandrelia | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | | | |
High-Efficiency DC-DC Converters Features (1)High-speedswitching (2)Smallgatecharge:QSW=17.5nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5m?(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10μA(max)(VDS=40V) (6)Enhancementmode:Vth=1.4to2.4 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-channel MOS 1.Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators ?MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=17.5nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5mΩ(typ.)(VGS | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-channel MOS 1.Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators ?MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=17.5nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5mΩ(typ.)(VGS | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
High-Efficiency DC-DC Converters Features (1)High-speedswitching (2)Smallgatecharge:QSW=17.5nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5m?(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10μA(max)(VDS=40V) (6)Enhancementmode:Vth=1.4to2.4 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
iscN-Channel MOSFET Transistor ?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=3.1m?(MAX)(VGS=10V) ?Enhancementmode: Vth=1.4to2.4V(VDS=10V,ID=0.5mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliab | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | | | |
High-Efficiency DC-DC Conve Features (1)High-speedswitching (2)Smallgatecharge:QSW=19nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5m?(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10μA(max)(VDS=40V) (6)Enhancementmode:Vth=1.4to2.4V | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
iscN-Channel MOSFET Transistor ?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=3.1m?(MAX)(VGS=10V) ?Enhancementmode: Vth=1.4to2.4V(VDS=10V,ID=0.5mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliab | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | | | |
MOSFETs Silicon N-channel MOS 1.Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators ?MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=19nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5mΩ(typ.)(VGS= | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-channel MOS 1.Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators ?MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=19nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5mΩ(typ.)(VGS= | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
High-Efficiency DC-DC Converters Features (1)High-speedswitching (2)Smallgatecharge:QSW=48nC(typ.) (3)Smalloutputcharge:Qoss=164nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.6m?(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10μA(max)(VDS=100V) (6)Enhancementmode:Vth=1.5to2.5 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-channel MOS 1.Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators ?MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=48nC(typ.) (3)Smalloutputcharge:Qoss=164nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.6mΩ(typ.)(VGS | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
MOSFETs Silicon N-channel MOS 1.Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators ?MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=48nC(typ.) (3)Smalloutputcharge:Qoss=164nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.6mΩ(typ.)(VGS | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
High-Efficiency DC-DC Converters Features (1)High-speedswitching (2)Smallgatecharge:QSW=21nC(typ.) (3)Smalloutputcharge:Qoss=66nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.4m?(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10μA(max)(VDS=60V) (6)Enhancementmode:Vth=1.5to2.5V | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.2Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | | |
TK3產(chǎn)品屬性
- 類型
描述
- 型號(hào)
TK3
- 功能描述
TERMINAL KIT P184 10EA T49
- RoHS
是
- 類別
盒，外殼，支架 >> 卡架 - 配件
- 系列
-
- 標(biāo)準(zhǔn)包裝
1
- 系列
VectorPak™
- 附件類型
EFP 模塊
- 適用于相關(guān)產(chǎn)品
PCB
| IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
xilinx |
22+ |
BGA |
6800 |
||||
CJ |
22+ |
WB-FBP03 |
8900 |
全新正品現(xiàn)貨 有掛就有現(xiàn)貨 |
|||
TEKNOVN |
25+ |
QFP128 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
|||
TOSHIBA |
21+ |
TO-220屬封 |
10 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
|||
TEKNDVUS |
2016+ |
BGA |
9000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
|||
TEKNOVU |
25+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
||||
TOSHIBA |
21+ |
TO-247 |
5000 |
認(rèn)準(zhǔn)星辰微電,買到低價(jià)原裝,一包也是批發(fā)價(jià) |
|||
TOSHIBA/東芝 |
19+ |
TO-247 |
2568 |
||||
TOS |
2018+ |
26976 |
代理原裝現(xiàn)貨/特價(jià)熱賣! |
||||
TOSHIBA |
23+ |
NA |
562 |
專做原裝正品,假一罰百! |
TK3芯片相關(guān)品牌
TK3規(guī)格書下載地址
TK3參數(shù)引腳圖相關(guān)
- uc3842
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- type-c
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- tsl230
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- TK3625
- TK3612M
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- TK35C
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- TK31C
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- TK2P60D
- TK2A65D
- TK28C
- TK2620M
- TK2620K
- TK2618M
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- TK2616M
- TK2616K
- TK2614M
- TK2614K
- TK25C
- TK25A
- TK2518F
- TK2518
- TK2350
- TK21C
- TK2150
- TK20C
- TK20A
- TK2070
- TK2051
- TK2050
- TK2019
- TIXS39
- TIXS37
- TIXS31
- TIXS30
- TIXS29
- TIXS28
- TIXS13
- TIXS12
- TIXS10
- TIXS09
- TIXP549
- TIXP548
- TIXP547
- TIXP40
- TIXP39
- TIXP07
TK3數(shù)據(jù)表相關(guān)新聞
TK16A60W
TK16A60W，全新原裝現(xiàn)貨0755-82732291當(dāng)天發(fā)貨或門市自取.QQ：1755232575/QQ：1157611585，微信號(hào):87680558.
2021-1-29TK65015MTL
https://hch01.114ic.com/
2020-11-13TK380P60Y
TK380P60Y，當(dāng)天發(fā)貨0755-82732291全新原裝現(xiàn)貨或門市自取.
2020-10-21TK150E09NE
TK150E09NE,全新原裝當(dāng)天發(fā)貨或門市自取0755-82732291.
2020-7-2TK4A65DA房間現(xiàn)貨.全新原裝進(jìn)口正品.特價(jià)熱賣
TO-92-3MOSFET，1ChannelP-ChannelAEC-Q10120VMOSFET，ThroughHole1ChannelN-Channel100VMOSFET，TO-252-3P-Channel150VMOSFET，TO-220-3MOSFETP-Channel60VMOSFET，2ChannelN-Channel10A20VMOSFET
2020-2-26TK150E09NE深圳市光華微科技有限公司18138231376
TK150E09NETOSHIBA/東芝TO-220
2019-6-26
DdatasheetPDF頁碼索引
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