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2N7002價格
參考價格:¥0.0520
型號:2N7002 品牌:Fairchild 備注:這里有2N7002多少錢,2025年最近7天走勢,今日出價,今日競價,2N7002批發(fā)/采購報價,2N7002行情走勢銷售排行榜,2N7002報價。型號 | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
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2N7002 | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ?N-channelenhancementmodefieldeffecttransistor,designedforhighspeedpulsedamplifieranddriverapplications,whichismanufactoredbytheN-ChannelDMOSprocess. Features ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitching. ?Ruggeda | PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司 | ||
2N7002 | N-ChannelEnhancement-ModeVerticalDMOSFETs GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh | SUTEX Supertex, Inc | ||
2N7002 | N-CHANNELENHANCEMENTMODEVERTICALDMOSFET FEATURES *60VoltVCEO | Zetex Zetex Semiconductors | ||
2N7002 | N-Channel60-V(D-S)MOSFET FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | ||
2N7002 | N-ChannelEnhancementModeFieldEffectTransistor Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | ||
2N7002 | N-CHANNELENHANCEMENT-MODEMOSFET DESCRIPTION: TheCENTRALSEMICONDUCTOR2N7002typeisanN-Channelenhancement-modeMOSFETmanufacturedbytheN-ChannelDMOSProcess,designedforhighspeedpulsedamplifieranddriverapplications. | CentralCentral Semiconductor Corp 美國中央半導(dǎo)體 | ||
2N7002 | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitanc | DIODESDiodes Incorporated 美臺半導(dǎo)體 | ||
2N7002 | N-ChannelEnhancementModeFieldEffectTransistor N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | CETChino-Excel Technology 華瑞華瑞股份有限公司 | ||
2N7002 | N-ChannelEnhancement-ModeMOSTransistor DESCRIPTION Calogic’s2N7002devicetypeisaverticalDMOSFETtransistorhousedinasurfacemountSOT-23formicro-assemblyapplications.Thedeviceisanexcellentchoiceforswitchingapplicationswherebreakdown(BV)andlowon-resistanceareimportant. | Calogic Calogic, LLC | ||
2N7002 | AdvancedSmallSignalMOSFET BVDSS=60V RDS(on)=5.0? ID=200mA FEATURES ●LowerRDS(on) ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | ||
2N7002 | SmallSignalMOSFETN-Channel Features: *LowOn-Resistance:3 *LowInputCapacitance:25PF *LowOutputCapacitance:6PF *LowThreshole:1.5V(TYE) *FastSwitchingSpeed:7.5ns | WEITRON Weitron Technology | ||
2N7002 | NChannelSmallSignalMOSFET ●DRIVESSWITCHS,RELAYS,SOLENOIDS,LAMPS,DISPLAYS,ETC. ●LOWOFFSETVOLTAGE ●LOWVOLTAGEOPERATION ●EASILYDRIVENWITHOUTBUFFER | STANSON Stanson Technology | ||
2N7002 | LogicN-ChannelMOSFET GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max7.5?)@VGS=10V RDS(on)(Max7.5?)@VGS=4.5V ■GateCharge(Typical | semiWell SemiWell Semiconductor | ||
2N7002 | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DESCRIPTION TheUTC2N7002usesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControlledSmallSigna | UTCUnisonic Technologies 友順友順科技股份有限公司 | ||
2N7002 | N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | ||
2N7002 | N-CHANNELTRANSISTOR Description TheMTN7002N2isaN-channelenhancement-modeMOStransistor. Drain-SourseVoltageBVDSS60V Drain-GateVoltage(RGS=1M:)BVDSS60V Gate-SourceVoltageVGS+/-40V ContinuousDrainCurrent(Ta=25℃)ID200*1mA ContinuousDrainCurrent(Ta=100℃)ID115*1mA PulsedDrainCurre | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | ||
2N7002 | SMDSignalDMOSTransistor(N-Channel) Features ?VoltageControlledSmallSignalSwitch ?HighDensityCellDesignforLowRDS(ON) ?RuggedandReliable ?HighSaturationCurrentCapablity ?RoHSCompliance | TAITRON TAITRON Components Incorporated | ||
2N7002 | SmallSignalMOSFET SmallSignalMOSFET115mAmps,60Volts N–ChannelSOT–23 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | ||
2N7002 | TECHNICALSPECIFICATIONSOFN-CHANNELSMALLSIGNALMOSFET Description Designedforlowvoltageandlowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,andotherswitchingapplications. | DCCOM Dc Components | ||
2N7002 | N-CHANNELMOSFET PRODUCTSUMMARY SOT-23Plastic-EncapsulateTransistors FEATURES HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability | SSC Silicon Standard Corp. | ||
2N7002 | N-ChannelMOSFET Features ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability Drain-SourcevoltageVDS60V DrainCurrentID115mA PowerDissipationPD225mW | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | ||
2N7002 | NCEN-ChannelEnhancementModePowerMOSFET GENERALFEATURES ●VDS=60V,ID=0.115A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | ||
2N7002 | FIELDEFFECTTRANSISTOR INTERFACEANDSWITCHINGAPPLICATION. FEATURES HighdensitycelldesignforlowRDS(ON). Voltagecontrolledsmallsignalswitch. Ruggedandreliable. Highsaturationcurrentcapablity. | KECKEC CORPORATION KEC株式會社 | ||
2N7002 | N-channelverticalD-MOStransistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS?technology. Productavailability:2N7002inSOT23. Features TrenchMOS?technology Veryfastswitching Logiclevelcompatible Subminiaturesurfacemountpackage. Applic | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | |
2N7002 | N-ChannelMOSFET Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF· ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?AdvancedTrenchProcessTechnology ?HighInputImpedance ?HighSpeedSwitching ?CMOSLogicCompatibleInput ?Marking:7002/S72 ·· | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | ||
2N7002 | Plastic-EncapsulatedTransistors FEATURES Powerdissipation PD:0.35W(Tamb=25℃) Draincurrent ID:250mA Drain-Sourcevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 東電電子東京電子有限公司 | ||
2N7002 | SmallSignalMOSFETTransistor SmallSignalMOSFETTransistor FEATURES ●HighDensityCellDesignForLowRDS(ON)。 ●VoltageControlledSmallSwitch. ●RuggedandReliable. ●HighSaturationCurrentCapability. APPLICATIONS ●N-channelenhancementmodeeffecttransistor. ●Switchingapplication. | BILINGalaxy Semi-Conductor Holdings Limited 銀河微電常州銀河世紀(jì)微電子股份有限公司 | ||
2N7002 | OptiMOS??Small-Signal-Transistor OptiMOSSmall-Signal-Transistor Features ?N-channel ?Enhancementmode ?Logiclevel ?Avalancherated ?fastswitching ?Pb-freelead-plating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | ||
2N7002 | N-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V) | YANGJIEYangzhou yangjie electronic co., ltd 揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司 | ||
2N7002 | SOT-23Plastic-EncapsulateMOSFET N-ChannelMOSFET Features ●MOSFET(N-Channel) ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability Applications ●LoadSwitchforPortableDevices ●DC/DCConverter | HDSEMIJiangsu High diode Semiconductor Co., Ltd 蘇海德半導(dǎo)體蘇海德半導(dǎo)體有限公司 | ||
2N7002 | N-ChannelEnhancementModeMOSFET Feature ●60V/0.5A,RDS(ON)=7500mΩ(MAX)@VGS=10V.Id=0.5A RDS(ON)=7500mΩ(MAX)@VGS=4.5V.Id=0.2A ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOT-23forSurfaceMountPackage. Applications ●PowerManagementinDesktopC | ZPSEMIZP Semiconductor 至尚臻品 | ||
2N7002 | N-Channel60-V(D-S)MOSFET FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | ||
2N7002 | N-ChannelEnhancementMOSFET Features ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司 | ||
2N7002 | N-CHANNELMOSFETinaSOT-23PlasticPackage Descriptions N-CHANNELMOSFETinaSOT-23PlasticPackage. Features SensitivegatetriggercurrentandLowHoldingcurrent.ESDprotecteddiode. Applications Intendedforuseingeneralpurposeswitchingandphasecontrolapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | ||
2N7002 | N-ChannelEnchanncement-ModeMosTransistor N-CHANNELENCHANNCEMENT-MODEMOSTRANSISTOR Description ???????SOT-23 | FCIFirst Components International 戈采戈采企業(yè)股份有限公司 | ||
2N7002 | SmallSignalMOSFETTransistor FEATURES ●HighDensityCellDesignForLowRDS(ON)。 ●VoltageControlledSmallSwitch. ●RuggedandReliable. ●HighSaturationCurrentCapability. APPLICATIONS ●N-channelenhancementmodeeffecttransistor. ●Switchingapplication. | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半導(dǎo)體美科半導(dǎo)體股份(香港)有限公司 | ||
2N7002 | SmallSignalMOSFET SmallSignalMOSFET115mAmps,60Volts N–ChannelSOT–23 ?Pb?FreePackageisAvailable.:HalogenFree ?AEC-Q101Pass | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | ||
2N7002 | MOSFET(N-Channel) MOSFET(N-Channel) FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | ||
2N7002 | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Voltage-60VoltsDrainCurreent-115mAmps FEATURES ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●ESDProtected:1000V MECHANICALDATA ●Case:SOT-23,MoldedPlastic ●CaseMaterial-ULFlammabili | DIOTECH Diotech Company. | ||
2N7002 | N-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | ||
2N7002 | Voltagecontrolledsmallsignalswitch MOSFET(N-Channel) FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | ||
2N7002 | N-ChannelEnhancementModeFieldEffectTransistor Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | ||
2N7002 | Plastic-EncapsulateMosfets N-ChannelMOSFET FEATURES HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch. Ruggedandreliable. Highsaturationcurrentcapability. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰電子有限公司 | ||
2N7002 | MOSFET(N-Channel) FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳實業(yè)有限公司 | ||
2N7002 | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance:RDS(ON) ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage MechanicalData ?Case:SOT-23,MoldedPlastic ?Terminals:SolderableperMIL-STD-202,Method208 ?TerminalConnections:SeeDiagram ?Marking:K | YIXINShenzhen Yixinwei Technology Co., Ltd. 壹芯微深圳市壹芯微科技有限公司 | ||
2N7002 | N-CHANNELENHANCEMENT-MODEMOSFETS VOLTAGE60VoltsCURRENT0.115Ampers FEATURES SOT-23FieldEffectTransistors | NIUHANGDongguan City Niuhang Electronics Co.LTD 紐航電子廣東紐航電子科技有限公司 | ||
2N7002 | Mosfet(N-Channel) Features ◇HighdensitycelldesignforlowRDS(ON) ◇Voltagecontrolledsmallsignalswitch ◇Ruggedandreliable ◇Highsaturationcurrentcapability | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司 | ||
2N7002 | N-ChannelEnhancement-ModeVerticalDMOSFET GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | ||
2N7002 | SOT-23Plastic-EncapsulateMOSFETS FEATURE *HighdensitycelldesignforlowRDS(ON) *Voltagecontrolledsmallsignalswitch *Ruggedandreliable *Highsaturationcurrentcapability | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司 | ||
2N7002 | N-ChannelMOSFET Features HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | ||
2N7002 | N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription ●TrenchPowerMVMOSFETtechnology ●Voltagecontrolledsmallsignalswitch ●LowinputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage Applications ●Batteryoperatedsystems ●Solid-staterelays ●Directlogic-levelinterface:TTL/CMOS | SAMYANGSAMYANG ELECTRONICS CO.,LTD. 三陽電子三陽電子有限公司 | ||
2N7002 | 60V,300mAN-channelTrenchMOSFET 1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusing TrenchMOSFETtechnology. 1.2Featuresandbenefits ?Suitableforlogiclevelgatedrive sources ?Veryfastswitching ?Surface-mountedpackage ?TrenchMOSFETtechnology 1.3Appl | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | ||
2N7002 | N-ChannelEnhancementModePowerMOSFET GeneralFeatures VDS=60V,ID=0.115A RDS(ON) | RECTRON Rectron Semiconductor | ||
2N7002 | N-ChannelEnhancementModePowerMOSFET GeneralFeatures VDS=60V,ID=0.115A RDS(ON) | RECTRON Rectron Semiconductor | ||
2N7002 | N-ChannelEnhancementModeFieldEffectTransistor Description TheseN?channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon?state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ||
2N7002 | MOSFET FEATURE HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability APPLICATION LoadSwitchforPortableDevices DC/DCConverter | SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | ||
2N7002 | N-Channel60-V(D-S)MOSFET ?LowOn-Resistance:2.5Ω ?LowThreshold:2.1V ?LowInputCapacitance:22pF ?FastSwitchingSpeed:7ns ?LowInputandOutputLeakage | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | ||
2N7002 | 60VN-ChannelMosfet Application ?Dictlogi-fevlinterface:TTLICMOS ?Drivers:relays,solenoids,lamps,hammers,display, memories,ransistors,tc. ?Batteryoperatedsystems ?Soicstaterelays | TECHPUBLICTECH PUBLIC Electronics co LTD 臺舟電子臺舟電子股份有限公司 | ||
2N7002 | SmallSignalMOSFETBareDie 文件:620.66 Kbytes Page:4 Pages | SS Silicon Supplies | ||
2N7002 | Plastic-EncapsulateMOSFETS 文件:227.98 Kbytes Page:2 Pages | SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD. 三聯(lián)盛科技股份深圳市三聯(lián)盛科技股份有限公司 |
2N7002產(chǎn)品屬性
- 類型
描述
- 型號
2N7002
- 功能描述
MOSFET N-CHANNEL 60V 115mA
- RoHS
否
- 制造商
STMicroelectronics
- 晶體管極性
N-Channel
- 汲極/源極擊穿電壓
650 V
- 閘/源擊穿電壓
25 V
- 漏極連續(xù)電流
130 A 電阻汲極/源極
- RDS(導(dǎo)通)
0.014 Ohms
- 配置
Single
- 安裝風(fēng)格
Through Hole
- 封裝/箱體
Max247
- 封裝
Tube
IC供應(yīng)商 | 芯片型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
標(biāo)準(zhǔn)封裝 |
11304 |
全新原裝正品/價格優(yōu)惠/質(zhì)量保障 |
|||
Vishay(威世) |
24+ |
標(biāo)準(zhǔn)封裝 |
7362 |
原廠直銷,大量現(xiàn)貨庫存,交期快。價格優(yōu),支持賬期 |
|||
ON |
23+ |
N/A |
10000 |
正規(guī)渠道,只有原裝! |
|||
MICROCHIP/微芯 |
24+ |
NA |
9000 |
原裝正品優(yōu)勢現(xiàn)貨,假一賠十 |
|||
CHANGJI |
2016+ |
SOT23 |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
|||
ZETEX |
24+ |
SMD |
24200 |
新進(jìn)庫存/原裝 |
|||
ON |
21+ |
SOT-23 |
60000 |
只做原裝 有單來談 |
|||
CJ |
24+/25+ |
TO-92L |
12000 |
100%原裝正品真實庫存,支持實單 |
|||
VISHAY |
23+ |
NA |
2374 |
||||
SILICONIX |
2009 |
SOT23-3 |
178 |
全新原裝 正品現(xiàn)貨 |
2N7002規(guī)格書下載地址
2N7002參數(shù)引腳圖相關(guān)
- 5000
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- 485接口
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- 303c
- 2sc4226
- 2N7012
- 2N7008
- 2N7007
- 2N7002Z
- 2N7002X
- 2N7002W
- 2N7002V
- 2N7002T
- 2N7002S
- 2N7002P
- 2N7002M
- 2N7002L
- 2N7002K
- 2N7002H
- 2N7002F
- 2N7002E
- 2N7002DW
- 2N7002D
- 2N7002CK,215
- 2N7002BKW,115
- 2N7002BKV,115
- 2N7002BKT,115
- 2N7002BKS,115
- 2N7002BKMB.315
- 2N7002BKMB,315
- 2N7002BKM,315
- 2N7002BK,215
- 2N7002B
- 2N7002A-RTK/P
- 2N7002A-7
- 2N7002A
- 2N7002-7-GIGA
- 2N7002-7-F
- 2N7002-7
- 2N7002_R1_00001
- 2N7002_D87Z
- 2N7002_
- 2N7002/G
- 2N7002.215
- 2N7002,215
- 2N7001T
- 2N7001
- 2N7000Z
- 2N7000TA
- 2N7000RLRAG
- 2N7000P
- 2N7000K
- 2N7000-G
- 2N7000G
- 2N7000BU
- 2N7000-AP
- 2N7000A
- 2N7000_D75Z
- 2N7000_D74Z
- 2N7000_D26Z
- 2N7000
- 2N6S2
- 2N6S1
- 2N699B
- 2N6990
- 2N699
- 2N6989U
- 2N6989
- 2N6988
- 2N6987U
- 2N6987
- 2N698
- 2N697S
- 2N697A
- 2N696
- 2N690
- 2N689
- 2N685
- 2N6849
- 2N6847JANTX
2N7002數(shù)據(jù)表相關(guān)新聞
2N7002 MOSFET N-CHANNEL
2N7002MOSFETN-CHANNEL60V115mA
2023-2-232N60L-TO220F1T-TG_UTC代理商
2N60L-TO220F1T-TG_UTC代理商
2023-2-32N7000L-TO92B-TG
2N7000L-TO92B-TG
2023-1-302N7002 7002
2N70027002
2021-10-192N7002 CJ/長電 SOT-23 支持原裝長電訂貨型號,歡迎咨詢!
2N7002CJ/長電SOT-23
2021-5-192N6509G中文資料
2N6509G中文資料
2019-2-18
DdatasheetPDF頁碼索引
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