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IRF630價(jià)格
參考價(jià)格：￥1.3192
型號：IRF630 品牌：STMICROELECTRONICS 備注：這里有IRF630多少錢，2025年最近7天走勢，今日出價(jià)，今日競價(jià)，IRF630批發(fā)/采購報(bào)價(jià)，IRF630行情走勢銷售排行榜，IRF630報(bào)價(jià)。| 型號 | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
IRF630 | N-channelTrenchMOStransistor GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips |   |
IRF630 | N-CHANNEL200V-0.35ihm-9A-TO-220/FPMESHOVERLAY]MOSFET Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. Generalfeatures ■Extremelyhighdv/dtcapability ■Verylowintrinsic | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) |  | |
IRF630 | N-ChannelPowerMOSFETs,12A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 |  | |
IRF630 | 9A,200V,0.400Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation |  | |
IRF630 | PowerMOSFET PowerMOSFET VDSS=200V,RDS(on)=0.40ohm,ID=9.0A | TELTokyo Electron Ltd. 東電電子東京電子有限公司 |  | |
IRF630 | N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.25? ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACHTERIZATION APPLICATIONS ■HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCO | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | | |
IRF630 | POWERMOSFET GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆Dynamicdv/dtRating ◆RepetitiveAvalancheRated ◆FastSwitching ◆EaseofParalleling ◆SimpleDrive | SUNTAC Suntac Electronic Corp. |  | |
IRF630 | N-CHANNELENHANCEMENTMODEPOWERMOSFET Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconvert | A-POWERAdvanced Power Electronics Corp. 富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司 |  | |
IRF630 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 |  | |
IRF630 | TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET Description Designedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. Features *RepetitiveAvalancheRated *FastSwitching *EaseofParalleling *SimpleDriveRequirements | DCCOM Dc Components |  | |
IRF630 | N-channelmosfettransistor Features ?WithTO-220package ?Lowon-stateandthermalresistance ?Fastswitching ?VDSS=200V;RDS(ON)≤0.4Ω;ID=9A ?1.gate2.drain3.source | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 |  | |
IRF630 | PowerMOSFET(Vdss=200V,Rds(on)=0.40ohm,Id=9.0A) Description ThirdGenerationHEXFETsMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParall | IRF International Rectifier |  | |
IRF630 | PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | KERSEMI Kersemi Electronic Co., Ltd. |  | |
IRF630 | NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinhighspeedswitching, uninterruptiblepowersupply,motorcontrol,audioamplifiers, industrialactuators. DC-DC&DC-ACconvertersfortelecom,industrialand consumerenvironment. Complianc | COMSET Comset Semiconductor |  | |
IRF630 | N-ChannelPowerMOSFETs,12A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 |  | |
IRF630 | N-ChannelPowerMOSFET DESCRIPTION TheNellIRF630areN-channelenhancementmodesilicongatepowerfieldeffecttransistors. Theyaredesigned,testedandguaranteedtowithstandlevelofenergyinbreakdownavalanchemadeofoperation. Theyaredesignedasanextremelyefficientandreliabledeviceforuseinawi | NELLSEMINell Semiconductor Co., Ltd 尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司 |  | |
IRF630 | N-ChannelPowerMOSFETs,12A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | | |
IRF630 | PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | |
IRF630 | N-CHANNEL200V-0.35W-9A-TO-220/FPMESHOVERLAY]MOSFET DESCRIPTION ThispowerMOSFETisdesignedusinghe company’sconsolidatedstriplayout-basedMESH OVERLAY]process.Thistechnologymatches andimprovestheperformancescomparedwith standardpartsfromvarioussources. APPLICATIONS nHIGHCURRENTSWITCHING nUNINTERRUPTIBLEPOWERSUPPL | SYC SYC Electronica |  | |
IRF630 | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 |  | |
IRF630 | N-ChannelPowerMosfets 文件：155.57 Kbytes Page：6 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. |  | |
IRF630 | N-channelTrenchMOStransistor 文件：923.6 Kbytes Page：3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | | |
IRF630 | FIELDEFFECTPOWERTRANSISTOR 文件：910.79 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | | |
IRF630 | FIELDEFFECTPOWERTRANSISTOR 文件：854.87 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | | |
IRF630 | PowerMOSFET 文件：283.3 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | |
IRF630 | N-channel200V-0.35廓-9ATO-220/TO-220FPMeshoverlay??IIPowerMOSFET 文件：336.19 Kbytes Page：14 Pages | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | | |
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | | |
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.333Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION ?DrainCurrent–ID=9A@TC=25℃ ?DrainSourceVoltage- :VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ?FastSwitchingSpeed ?LowDriveRequirement APPLICATIONS ?Thisdeviceisn-channel,enhancementmode,powerMOSFET designedespecia | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION ?DrainCurrent–ID=9A@TC=25℃ ?DrainSourceVoltage- :VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?DesingedforhighefficiencyswitchingDC/DCconverters, switchmodepowersupplies,DC-ACconver | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | | | |
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingKersemiproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighe | KERSEMI Kersemi Electronic Co., Ltd. | | | |
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainCurrent–ID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·FastSwitchingSpeed ·LowDriveRequirement ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·This | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | | | |
N-ChannelMOSFETTransistor DESCRIPTION ?DrainCurrent–ID=9A@TC=25℃ ?DrainSourceVoltage- :VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?DesingedforhighefficiencyswitchingDC/DCconverters, switchmodepowersupplies,DC-ACconver | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | | | |
N-channelmosfettransistor ?Features ·WithTO-220Fpackage ·Lowon-stateandthermalresistance ·Fastswitching ·VDSS=200V;RDS(ON)≤0.4Ω;ID=9A ·1.gate2.drain3.source | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | | | |
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.25? ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACHTERIZATION APPLICATIONS ■HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCO | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | | | |
iscN-ChannelMOSFETTransistor ?DESCRITION ?Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. ?FEATURES ?RDS(on)=0.4Ω ?6Aand200V ?singlepulseavalancheenergyrated ?SOAisPower-DissipationLimited ?LinearTransfer | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | | | |
N-CHANNEL200V-0.35ihm-9A-TO-220/FPMESHOVERLAY]MOSFET Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. Generalfeatures ■Extremelyhighdv/dtcapability ■Verylowintrinsic | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | | | |
N-CHANNEL200V-0.35W-9ATO-220/TO-220FPMESHOVERLAYMOSFET Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | | | |
N-CHANNEL200V-0.35W-9ATO-220/TO-220FPMESHOVERLAYMOSFET Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | | | |
N-Channel200V(D-S)MOSFET FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?SinktoLeadCreepageDistance=4.8mm ?175°COperatingTemperature ?DynamicdV/dtRating ?LowThermalResistance ?Lead(Pb)-freeAvailable | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 |  | | |
N-ChannelMOSFETTransistor DESCRIPTION ●DrainCurrent–ID=9.3A@TC=25℃ ●DrainSourceVoltage- :VDSS=200V(Min) ●StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ●FastSwitchingSpeed ●LowDriveRequirement APPLICATIONS ●Thisdeviceisn-channel,enhancementmode,powerMOSFETdesignedespecially | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | | | |
PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | | | |
N-ChannelPowerMOSFETs200V,9.3A,0.30? Features ?UltraLowOn-Resistance -rDS(ON)=0.200?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
iscN-ChannelMOSFETTransistor ?DESCRITION ?Efficientandreliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.3? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableop | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | | | |
FastSwitchingSpeed DESCRIPTION ●DrainCurrent–ID=9.3A@TC=25℃ ●DrainSourceVoltage- :VDSS=200V(Min) ●StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ●FastSwitchingSpeed ●LowDriveRequirement APPLICATIONS ●Thisdeviceisn-channel,enhancementmode,powerMOSFETdesignedespecially | KERSEMI Kersemi Electronic Co., Ltd. | | | |
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-262packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchingapplicatio | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | | | |
N-ChannelPowerMOSFETs200V,9.3A,0.30? Features ?UltraLowOn-Resistance -rDS(ON)=0.200?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | | | |
AdvancedProcessTechnology Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | | | |
AdvancedProcessTechnology Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | | | |
N-ChannelPowerMOSFETs200V,9.3A,0.30? Features ?UltraLowOn-Resistance -rDS(ON)=0.200?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | | |
PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | | | |
AdvancedProcessTechnology Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | | | |
AdvancedProcessTechnology Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | | | |
PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | KERSEMI Kersemi Electronic Co., Ltd. | | | |
N-Channel200V(D-S)MOSFET FEATURES ?175°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch ?DT-TrenchPowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | | |
N-channelTrenchMOStransistor GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | |
IRF630產(chǎn)品屬性
- 類型
描述
- 型號
IRF630
- 功能描述
MOSFET N-Ch 200 Volt 10 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶體管極性
N-Channel
- 汲極/源極擊穿電壓
650 V
- 閘/源擊穿電壓
25 V
- 漏極連續(xù)電流
130 A 電阻汲極/源極
- RDS（導(dǎo)通）
0.014 Ohms
- 配置
Single
- 安裝風(fēng)格
Through Hole
- 封裝/箱體
Max247
- 封裝
Tube
| IC供應(yīng)商 | 芯片型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
2406+ |
1850 |
誠信經(jīng)營!進(jìn)口原裝!量大價(jià)優(yōu)! |
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INFINE0N |
21+ |
D2PAK (TO-263) |
32568 |
100%進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價(jià)格(誠信經(jīng)營 |
|||
IR |
TO-220 |
6688 |
15 |
現(xiàn)貨庫存 |
|||
VISHAY |
23+ |
TO-220A |
33000 |
原裝正品現(xiàn)貨 |
|||
FSC |
1926+ |
TO-220 |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
|||
IR |
24+ |
TO-263 |
8000 |
原裝，正品 |
|||
IR |
25+23+ |
TO-263 |
18127 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
|||
ST |
2511 |
原廠原封 |
16900 |
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價(jià) |
|||
ST(意法) |
23+ |
15000 |
專業(yè)幫助客戶找貨 配單,誠信可靠! |
||||
IR |
D2PAK |
8560 |
一級代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨 |
IRF630芯片相關(guān)品牌
IRF630規(guī)格書下載地址
IRF630參數(shù)引腳圖相關(guān)
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk觸發(fā)器
- j111
- j108
- isd1420
- IRF640NSTRRPBF-CUTTAPE
- IRF640NSTRRPBF
- IRF640NSTRLPBF-CUTTAPE
- IRF640NSTRLPBF
- IRF640NSPBF
- IRF640NPBF
- IRF640NLPBF
- IRF640LPBF
- IRF640A
- IRF640
- IRF637
- IRF636
- IRF635
- IRF634SPBF
- IRF634S
- IRF634PBF
- IRF634N
- IRF634B
- IRF634A
- IRF-634
- IRF634
- IRF633
- IRF632
- IRF631
- IRF630STRLPBF
- IRF630SPBF
- IRF630S
- IRF630R
- IRF630PBF
- IRF630NSTRRPBF
- IRF630NSTRLPBF
- IRF630NSPBF
- IRF630NPBF
- IRF630NLPBF
- IRF630N
- IRF630M
- IRF630F
- IRF630B
- IRF630A
- IRF627
- IRF626
- IRF625
- IRF624SPBF
- IRF624S
- IRF624PBF
- IRF624B
- IRF624A
- IRF624
- IRF623
- IRF622
- IRF6218STRLPBF-CUTTAPE
- IRF6218STRLPBF
- IRF6218SHR
- IRF6218PBF
- IRF6218
- IRF6217TRPBF
- IRF6217
- IRF6216TRPBF-CUTTAPE
- IRF6216TRPBF
- IRF6216PBF
- IRF6216
- IRF6215STRRPBF
- IRF6215STRLPBF
- IRF6215SPBF
- IRF6215PBF
- IRF6215LPBF
- IRF6215
- IRF621
- IRF620STRLPBF
- IRF620SPBF
- IRF620S
- IRF620R
- IRF620PBF
- IRF620N
- IRF620B
- IRF620A
- IRF6201TRPBF
- IRF6201PBF
- IRF620
IRF630數(shù)據(jù)表相關(guān)新聞
IRF540NPBF
全新原裝現(xiàn)貨支持第三方機(jī)構(gòu)驗(yàn)證
2022-10-19IRF640NPBF 原裝正品
品牌IR現(xiàn)貨300K
2022-7-5IRF540NPBF 軍工工藝
N溝道IRF540NPBFXYTO-220全新現(xiàn)貨
2021-7-29IRF5803TRPBF場效應(yīng)管
IRF5803TRPBF場效應(yīng)管
2021-3-24IRF630N
原裝正品現(xiàn)貨價(jià)格優(yōu)惠
2019-3-25IRF630N
IRF630N
2019-3-25
DdatasheetPDF頁碼索引
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