位置：IRF6612TRPBF > IRF6612TRPBF詳情
IRF6612TRPBF中文資料
IRF6612TRPBF數(shù)據(jù)手冊規(guī)格書PDF詳情
Description
The IRF6612PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
? RoHs Compliant
? Lead-Free (Qualified up to 260°C Reflow)
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? High Cdv/dt Immunity
? Low Profile (<0.7mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
IRF6612TRPBF產(chǎn)品屬性
- 類型
描述
- 型號
IRF6612TRPBF
- 功能描述
MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
- RoHS
否
- 制造商
STMicroelectronics
- 晶體管極性
N-Channel
- 汲極/源極擊穿電壓
650 V
- 閘/源擊穿電壓
25 V
- 漏極連續(xù)電流
130 A 電阻汲極/源極
- RDS（導(dǎo)通）
0.014 Ohms
- 配置
Single
- 安裝風(fēng)格
Through Hole
- 封裝/箱體
Max247
- 封裝
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
19+ |
IR |
21120 |
||||
IR |
24+ |
DirectFET |
14400 |
只做原廠渠道 可追溯貨源 |
|||
IR |
2021+ |
IR |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
|||
IR |
24+ |
QFN |
45000 |
IR代理原包原盒,假一罰十。最低價 |
|||
IR |
24+ |
QFN |
7850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
|||
IR |
25+ |
QFN |
15620 |
IR全新特價IRF6612TRPBF即刻詢購立享優(yōu)惠#長期有貨 |
|||
IR |
24+ |
DirectFETtradeIso |
7500 |
||||
IR |
2016+ |
QFN |
4557 |
公司只做原裝,假一罰十,可開17%增值稅發(fā)票! |
|||
IR |
24+ |
原廠封裝 |
5200 |
原裝現(xiàn)貨假一罰十 |
|||
IR |
18+ |
QFN |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
IRF6612TRPBF 價格
參考價格：￥11.9253
IRF6612TRPBF 資料下載更多...
IRF6612TRPBF 芯片相關(guān)型號
- 108J
- 143J
- 1571983-3
- 15KP43
- 1-87232-1
- 1-87232-7
- 2-1571999-9
- 4N37TVM
- 5.0SMDJ36A
- 5.0SMDJ60A
- 5-104655-4
- 5-147384-7
- 5221128-1
- 87232-5
- 90USB82-16MU
- B32671L1472
- B57235S0809M000
- B57235S0809M051
- B59872C0120A070
- B59950C0130A070
- B59980C0120A070
- BC857B-7-F
- CCM-5
- CDSOD323-T08LC
- DS30519
- HCPL0531
- IRF7329TRPBF
- IRF7403TRPBF
- IRF9388PBF
- IRGPS40B120UPBF
IRF相關(guān)芯片制造商
Datasheet數(shù)據(jù)表PDF頁碼索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
International Rectifier
中文資料: 32183條
International Rectifier Corporation（簡稱IRF）是一家全球領(lǐng)先的功率半導(dǎo)體制造商，成立于1947年，總部位于美國加利福尼亞州。IRF專注于開發(fā)和提供高效能的功率管理解決方案，其產(chǎn)品廣泛應(yīng)用于汽車、工業(yè)、消費電子、航空航天、通信和計算等多個領(lǐng)域。公司以其功率MOSFET聞名，提供多種類型的整流二極管，包括肖特基二極管和超快恢復(fù)二極管，同時還開發(fā)IGBT（絕緣柵雙極晶體管）和電源管理IC。IRF在功率半導(dǎo)體領(lǐng)域的創(chuàng)新和技術(shù)積累為其贏得了良好的聲譽，并于2014年被英飛凌科技股份公司（Infineon Technologies AG）收購，這一收購旨在增強英飛凌在
