位置：首頁(yè) > IC中文資料第12749頁(yè) > MTB23P06
| 型號(hào) | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
MTB23P06 | TMOSPOWERFET23AMPERES60VOLTS TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 |  |   |
MTB23P06 | TMOSPOWERFET23AMPERES60VOLTS TMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount P-ChannelEnhancement-ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponents | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | | |
TMOSPOWERFET23AMPERES60VOLTS TMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount P-ChannelEnhancement-ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponents | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | | | |
TMOSPOWERFET23AMPERES60VOLTS TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | | | |
P??hannelPowerMOSFET 文件：263.53 Kbytes Page：10 Pages | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 |  | | |
N-Channel60V(D-S)MOSFET 文件：1.32134 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 |  | | |
P??hannelPowerMOSFET 文件：263.53 Kbytes Page：10 Pages | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | | |
MTB23P06產(chǎn)品屬性
- 類型
描述
- 型號(hào)
MTB23P06
- 制造商
MOTOROLA
- 制造商全稱
Motorola, Inc
- 功能描述
TMOS POWER FET 23 AMPERES 60 VOLTS
| IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
2405+ |
TO-263 |
4475 |
只做原裝正品渠道訂貨 |
|||
ON |
1822+ |
TO-263 |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
|||
ON |
23+ |
TO-263 |
6893 |
||||
ON |
24+ |
D2PAK |
6000 |
進(jìn)口原裝正品假一賠十,貨期7-10天 |
|||
ON/安森美 |
24+ |
NA/ |
7851 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票 |
|||
ON |
25+ |
TO-263 |
4500 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷(xiāo)售! |
|||
ONS |
24+ |
D2PAK |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
|||
MOT/ON |
23+ |
TO |
15008 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
|||
ON/安森美 |
22+ |
SOT-263 |
20000 |
保證原裝正品,假一陪十 |
|||
MOTOROLA/摩托羅拉 |
24+ |
TO-263 |
24000 |
只做原廠渠道 可追溯貨源 |
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