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T820價(jià)格
參考價(jià)格：￥36.8125
型號(hào)：T8201 品牌：Electroswitch 備注：這里有T820多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，T820批發(fā)/采購(gòu)報(bào)價(jià)，T820行情走勢(shì)銷售排行榜，T820報(bào)價(jià)。| 型號(hào) | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
T820 | PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors |  |   |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(750-900AmperesAvg100-2200Volts)
| POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
SNUBBERLESSTRIAC DESCRIPTION BasedonST’Snubberlesstechnologyprovidinghighcommutationperformances,theT820-600W/800Warespeciallyrecommendedforuseoninductiveloads,thankstotheirhighcommutationperformances,suchaswashing-machinesdrummotorcontrollers.TheycomplywithULstandards(ref. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) |  | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
PhaseControlSCR(500-600AmperesAvg2200-4200Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
SNUBBERLESSTRIAC DESCRIPTION BasedonST’Snubberlesstechnologyprovidinghighcommutationperformances,theT820-600W/800Warespeciallyrecommendedforuseoninductiveloads,thankstotheirhighcommutationperformances,suchaswashing-machinesdrummotorcontrollers.TheycomplywithULstandards(ref. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | | | |
SNUBBERLESSTRIAC DESCRIPTION TheT820/830Wtriacsusehighperformanceglasspassivatedchiptechnology,housedinafullymoldedplasticISOWATT220ABpackage. TheSNUBBERLESSTMconceptofferssuppressionofR-Cnetwork,andissuitableforapplicationssuchasphasecontrolandstaticswitchoninductive | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | | | |
ATMInterconnect Description TheCelXpresT8207deviceintegratesalloftherequiredfunctionalitytotransportATMcellsacrossabackplanearchitecturewithhigh-speedcelltrafficexceeding1.5Gbits/stoamaximumof32destinations.Themanagementofmultipleservicecategoriesandmonitoringofperformance | agere Agere Systems |  | | |
SNUBBERLESSTRIAC DESCRIPTION BasedonST’Snubberlesstechnologyprovidinghighcommutationperformances,theT820-600W/800Warespeciallyrecommendedforuseoninductiveloads,thankstotheirhighcommutationperformances,suchaswashing-machinesdrummotorcontrollers.TheycomplywithULstandards(ref. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | | | |
SNUBBERLESSTRIAC DESCRIPTION TheT820/830Wtriacsusehighperformanceglasspassivatedchiptechnology,housedinafullymoldedplasticISOWATT220ABpackage. TheSNUBBERLESSTMconceptofferssuppressionofR-Cnetwork,andissuitableforapplicationssuchasphasecontrolandstaticswitchoninductive | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | | | |
PhaseControlSCR(750AmperesAverage2400Volts) Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □ | POWEREX Powerex Power Semiconductors | | | |
ATMInterconnect Description TheCelXpresT8208deviceintegratesalloftherequiredfunctionalitytotransportATMcellsacrossabackplanearchitecturewithhigh-speedcelltrafficexceeding1.5Gbits/stoamaximumof32destinations.Themanagementofmultipleservicecategoriesandmonitoringofperformance | agere Agere Systems | | | |
SNUBBERLESSTRIAC DESCRIPTION TheT820/830Wtriacsusehighperformanceglasspassivatedchiptechnology,housedinafullymoldedplasticISOWATT220ABpackage. TheSNUBBERLESSTMconceptofferssuppressionofR-Cnetwork,andissuitableforapplicationssuchasphasecontrolandstaticswitchoninductive | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | | |
T820產(chǎn)品屬性
- 類型
描述
- 型號(hào)
T820
- 制造商
GE Sensing & Inspection Technologies
- 功能描述
CO2/TEMP SENS WALL MNT DUAL OUT
| IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
AGERE |
24+ |
NA/ |
3310 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
|||
LUCENT |
25+ |
QFP |
996880 |
只做原裝,歡迎來(lái)電資詢 |
|||
ELECTROSWITCH |
24+ |
161706 |
明嘉萊只做原裝正品現(xiàn)貨 |
||||
AGERE |
0740+;/ |
N/A |
34 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
|||
ST |
05+ |
原廠原裝 |
551 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
|||
AGERE |
25+ |
BGA |
12496 |
AGERE原裝正品T8208BAL2即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
|||
ST |
1822+ |
TO-247 |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
|||
AGERE/LUCENT |
25+ |
BGA |
4500 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售! |
|||
ST |
23+ |
TO-220F |
10000 |
專做原裝正品,假一罰百! |
|||
LUCENT |
23+ |
QFP |
98900 |
原廠原裝正品現(xiàn)貨!! |
T820芯片相關(guān)品牌
T820規(guī)格書下載地址
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T820數(shù)據(jù)表相關(guān)新聞
T73YP504KT20
優(yōu)勢(shì)渠道
2023-10-18T9G0161203DH
T9G0161203DH
2023-6-7T810-600B-TR
T810-600B-TR
2023-3-16T90S1D12-24
T90S1D12-24
2021-1-15T6V0S5-7
https://hch01.114ic.com/
2020-11-13T835H-6I（原廠授權(quán)中國(guó)分銷商）
主要參數(shù)： 分立半導(dǎo)體產(chǎn)品 電壓-斷態(tài)：600V 電流-通態(tài)（It（RMS））（最大值）：8A 電壓（Vgt）（最大值）：1V 電流50，60Hz（Itsm）：80A，84A 電流（Igt）（最大值）：35mA 電流-保持（Ih）（最大值）：35mA 工作溫度：-40°C~150°C 安裝類型：通孔 封裝：TO-220-3
2020-3-6
DdatasheetPDF頁(yè)碼索引
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