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| 型號(hào) | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
TC51V | 500 mW LL-34 Hermetically Sealed Glass Zener Voltage Regulators [TAK_CHEONG] SpecificationFeatures: ■ZenerVoltageRange2.0to56Volts ■LL-34(Mini-MELF)Package ■SurfaceDeviceTypeMounting ■HermeticallySealedGlass ■CompressionBondedConstruction ■Allexternalsurfacesarecorrosionresistantandleadsarereadilysolderable ■1stbandin | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 |  |   |
TC51V | 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators SpecificationFeatures: ■ZenerVoltageRange2.0to75Volts ■DO-35Package(JEDEC) ■Through-HoleDeviceTypeMounting ■HermeticallySealedGlass ■CompressionBondedConstruction ■AllExternalSurfacesAreCorrosionResistantAndLeadsAreReadilySolderable ■RoHSCompliant ■Solder | TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd 德昌電子德昌電子（集團(tuán)）有限公司 |  | |
262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4260DFTSisthenewgenerationdynamicRAMorganized262,144wordby16bits.TheTC51V4260DFTSuti- lizesToshiba'sCMOSsilicongateprocesstechnologyaswellasadvancedcircuittechniquestoprovidewideoperating margins,bothinternallyandtothesystemuser.Multip | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 |  | | |
262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4260DFTSisthenewgenerationdynamicRAMorganized262,144wordby16bits.TheTC51V4260DFTSuti- lizesToshiba'sCMOSsilicongateprocesstechnologyaswellasadvancedcircuittechniquestoprovidewideoperating margins,bothinternallyandtothesystemuser.Multip | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4260DFTSisthenewgenerationdynamicRAMorganized262,144wordby16bits.TheTC51V4260DFTSuti- lizesToshiba'sCMOSsilicongateprocesstechnologyaswellasadvancedcircuittechniquestoprovidewideoperating margins,bothinternallyandtothesystemuser.Multip | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | | |
TC51V產(chǎn)品屬性
- 類型
描述
- 型號(hào)
TC51V
- 功能描述
500 mW LL-34 Hermetically Sealed Glass Zener Voltage Regulators
| IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TOS |
24+ |
TSOP |
2789 |
全新原裝自家現(xiàn)貨!價(jià)格優(yōu)勢! |
|||
TOSHIBA |
2024+ |
SOJ-42 |
50000 |
原裝現(xiàn)貨 |
|||
TOSHIBA |
23+ |
TSOP |
9526 |
||||
TOS |
24+ |
TSOP |
6232 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存! |
|||
TOS |
05+ |
原廠原裝 |
19598 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
|||
TOS |
23+ |
TSOP |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
|||
TOS |
24+ |
TSOP |
6868 |
原裝現(xiàn)貨,可開13%稅票 |
|||
TOSHIBA |
TSSOP |
800 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
||||
TOSH |
20+ |
SOP |
2960 |
誠信交易大量庫存現(xiàn)貨 |
|||
TOSHIBA/東芝 |
24+ |
TSSOP |
22055 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
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TC51V規(guī)格書下載地址
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TC51V數(shù)據(jù)表相關(guān)新聞
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TC4452VOA,全新.當(dāng)天發(fā)貨0755-82732291當(dāng)天發(fā)貨或門市自取.企鵝：一七五五二三二五七五/企鵝：一一五七六一一五八五，威:八七六八零五五八.
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原裝現(xiàn)貨
2020-10-15
DdatasheetPDF頁碼索引
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