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TIP112晶體管資料
TIP112別名:TIP112三極管、TIP112晶體管、TIP112晶體三極管
TIP112生產(chǎn)廠家:美國得克薩斯儀表公司
TIP112制作材料:Si-N+Darl+Di
TIP112性質(zhì):低頻或音頻放大 (LF)_開關(guān)管 (S)_功率放大 (L
TIP112封裝形式:直插封裝
TIP112極限工作電壓:100V
TIP112最大電流允許值:4A
TIP112最大工作頻率:<1MHZ或未知
TIP112引腳數(shù):3
TIP112最大耗散功率:50W
TIP112放大倍數(shù):β>1000
TIP112圖片代號:B-10
TIP112vtest:100
TIP112htest:999900
- TIP112atest:4
TIP112wtest:50
TIP112代換 TIP112用什么型號代替:BD265B,BD701,BDW23C,BDW53C,BDW63C,
TIP112價格
參考價格:¥0.9355
型號:TIP112 品牌:MULTICOMP 備注:這里有TIP112多少錢,2025年最近7天走勢,今日出價,今日競價,TIP112批發(fā)/采購報價,TIP112行情走勢銷售排行榜,TIP112報價。型號 | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
---|---|---|---|---|
TIP112 | POWERTRANSISTORS(2.0A,60-100V,50W)
| MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | ||
TIP112 | DARLINGTON2AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS
| MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | ||
TIP112 | NPNSILICONPOWERDARLINGTONS NPNSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewith TIP115,TIP116andTIP117 ●50Wat25°CCaseTemperature ●4AContinuousCollectorCurrent ●MinimumhFEof500at4V,2A | POINN Power Innovations Ltd | ||
TIP112 | COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS DESCRIPTION TheTIP110andTIP112aresiliconEpitaxial-BaseNPNtransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-220plasticpackage.Theyareintentedforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP115andTIP117. ■STMicroe | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | ||
TIP112 | PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS
| bocaBoca Semiconductor Corporation 博卡博卡半導(dǎo)體公司 | ||
TIP112 | MonolithicConstructionWithBuiltInBase-EmitterShuntResistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors ?ComplementarytoTIP115/116/117 ?HighDCCurrentGain:hFE=1000@VCE=4V,IC=1A(Min.) ?LowCollector-EmitterSaturationVoltage ?IndustrialUse | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | ||
TIP112 | EPITAXIALPLANARNPNTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.) MONOLITHICCONSTRUCTIONWITHBUILTIN BASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES ?HighDCCurrentGain. :hFE=1000(Min.),?VCE=4V,IC=1A. ?LowCollector-EmitterSaturationVoltage. ?ComplementarytoTIP117. | KECKEC CORPORATION KEC株式會社 | ||
TIP112 | PLASTICPOWERTRANSISTORS PLASTICPOWERTRANSISTORS IntendedforuseinMediumPowerLinearandSwitchingApplications TO-220PlasticPackage | TELTokyo Electron Ltd. 東電電子東京電子有限公司 | ||
TIP112 | TECHNICALSPECIFICATIONSOFNPNDARLINGTONTRANSISTOR Description Designedforuseingeneralpurposeamplifierandlow-speedswitchingapplications. | DCCOM Dc Components | ||
TIP112 | PlasticMedium-PowerComplementarySiliconTransistors PlasticMedium-PowerComplementarySiliconTransistors Designedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain? hFE=2500(Typ)@IC =1.0Adc ?Collector?EmitterSustainingVoltage?@30mAdc VCEO(sus)=60Vdc(Min) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ||
TIP112 | SiliconNPNDarlingtonPowerTransistors DESCRIPTION ?WithTO-220Cpackage ?DARLINGTON ?HighDCcurrentgain ?Lowcollectorsaturationvoltage ?ComplementtotypeTIP115/116/117 APPLICATIONS ?Forindustrialuse | SAVANTIC Savantic, Inc. | ||
TIP112 | DarlingtonPowerTransistors(NPN) DarlingtonPowerTransistors(NPN) Features ?Designedforgeneral-purposeamplifierandlowspeed switchingapplications ?RoHSCompliant | TAITRON TAITRON Components Incorporated | ||
TIP112 | NPNEPITAXIALSILICONDARLINGTONTRANSISTOR DESCRIPTION TheUTCTIP112isdesignedforsuchapplicationsas:DC/DCconverterssupplylineswitching,batterycharger,LCDbacklighting,peripheraldrivers,Driverinlowsupplyvoltageapplications(e.g.lampsandLEDs)andinductiveloaddriver(e.g.relays,buzzersandmotors). FEATURES * | UTCUnisonic Technologies 友順友順科技股份有限公司 | ||
TIP112 | SiliconNPNDarlingtonPowerTransistor Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?ThecomplementaryPNPtypesaretheTIP115/116/117respectively ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?Mois | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | ||
TIP112 | SiliconNPNDarlingtonPowerTransistors DESCRIPTION ?WithTO-220Cpackage ?DARLINGTON ?HighDCcurrentgain ?Lowcollectorsaturationvoltage ?ComplementtotypeTIP115/116/117 APPLICATIONS ?Forindustrialuse | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ||
TIP112 | DARLINGTONTRANSISTOR(NPN) FEATURES ●HighDCCurrentGain:hFE=1000@VCE=4V,IC=1A(Min.) ●LowCollector-EmitterSaturationVoltage ●IndustrialUse | FS First Silicon Co., Ltd | ||
TIP112 | SILICONDARLINGTONPOWERTRANSISTORS SILICONDARLINGTONPOWERTRANSISTORS NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe. Theyaredesignedforgeneralpurposeamplifierandlow-speedswitchingapplications. PNPcomplementsareTIP115-116-117 CompliancetoRoHS. | COMSET Comset Semiconductor | ||
TIP112 | SiliconNPNtransistorinaTO-220PlasticPackage. Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features ComplementtoTIP117. Applications Mediumpowerlinearswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | ||
TIP112 | DARLINGTONTRANSISTOR(NPN) TO-220-3LPlastic-EncapsulateTransistors FEATURES ●HighDCCurrentGain:hFE=1000@VCE=4V,IC=1A(Min.) ●LowCollector-EmitterSaturationVoltage ●IndustrialUse | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | ||
TIP112 | PLASTICPOWERTRANSISTORS IntendedforuseinMediumPowerLinearandSwitchingApplications | CDIL Continental Device India Limited | ||
TIP112 | SiliconPowerdarlingtonComplementarytransistors
| CentralCentral Semiconductor Corp 美國中央半導(dǎo)體 | ||
TIP112 | PLASTICMEDIUM-POWERCOPLEMENTARYSILICONTRANSISTORS
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | ||
TIP112 | TO-220-3LPlastic-EncapsulateTransistors FEATURES HighDCCurrentGain:hFE=1000@VCE=4V,IC=1A(Min.) LowCollector-EmitterSaturationVoltage IndustrialUse | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | ||
TIP112 | NPNTransistorBareDie Features Collectorcurrentupto2A LowVCE(sat) VeryhighhFE Solderablebackmetal HighReliabilitytestedgradesforMilitary+Space | SS Silicon Supplies | ||
TIP112 | 封裝/外殼:TO-220-3 包裝:管件 描述:TRANS NPN DARL 100V 2A TO220-3 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ||
TIP112 | 封裝/外殼:TO-220-3 包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 描述:TRANS NPN DARL 100V 2A TO220 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個 | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | ||
TIP112 | DARLINGTONTRANSISTOR(NPN) 文件:228.04 Kbytes Page:2 Pages | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | ||
TIP112 | SiliconNPNDarlingtonPowerTransistor 文件:285.31 Kbytes Page:2 Pages | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | ||
TIP112 | NPNEPITAXIALSILICONDARLINGTONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | ||
TIP112 | SiliconNPNDarlingtonPowerTransistors 文件:124.43 Kbytes Page:4 Pages | SAVANTIC Savantic, Inc. | ||
TIP112 | PlasticMedium-PowerComplementarySiliconTransistors 文件:148.66 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ||
TIP112 | SiliconNPNDarlingtonPowerTransistor 文件:234.52 Kbytes Page:2 Pages | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | ||
TIP112 | PlasticMedium-PowerComplementarySiliconTransistors 文件:99.95 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ||
TIP112 | TO-220-PowerTransistorsandDarlingtons 文件:76.15 Kbytes Page:3 Pages | RECTRON Rectron Semiconductor | ||
SiliconNPNDarlingtonPowerTransistor Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?ThecomplementaryPNPtypesaretheTIP115/116/117respectively ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?Mois | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | |||
EPITAXIALPLANARNPNTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.) MONOLITHICCONSTRUCTIONWITHBUILTIN BASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES ?HighDCCurrentGain. :hFE=1000(Min.),VCE=4V,IC=1A. ?LowCollector-EmitterSaturationVoltage. ?ComplementarytoTIP117F. | KECKEC CORPORATION KEC株式會社 | |||
PLASTICPOWERTRANSISTORS IntendedforuseinMediumPowerLinearandSwitchingApplications | CDIL Continental Device India Limited | |||
NPNEPITAXIALSILICONDARLINGTONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | |||
NPNEPITAXIALSILICONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | |||
EPITAXIALPLANARNPNTRANSISTOR 文件:450.47 Kbytes Page:2 Pages | KECKEC CORPORATION KEC株式會社 | |||
EPITAXIALPLANARNPNTRANSISTOR 文件:450.47 Kbytes Page:2 Pages | KECKEC CORPORATION KEC株式會社 | |||
PlasticMedium-PowerComplementarySiliconTransistors 文件:99.95 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | |||
PlasticMedium-PowerComplementarySiliconTransistors 文件:148.66 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | |||
NPNEPITAXIALSILICONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | |||
NPNEPITAXIALSILICONDARLINGTONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | |||
NPNEPITAXIALSILICONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | |||
NPNEPITAXIALSILICONDARLINGTONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | |||
NPNEPITAXIALSILICONDARLINGTONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | |||
NPNEPITAXIALSILICONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | |||
NPNEPITAXIALSILICONDARLINGTONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | |||
NPNEPITAXIALSILICONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | |||
NPNEPITAXIALSILICONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | |||
NPNEPITAXIALSILICONDARLINGTONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | |||
NPNEPITAXIALSILICONDARLINGTONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | |||
NPNEPITAXIALSILICONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | |||
NPNEPITAXIALSILICONDARLINGTONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | |||
NPNEPITAXIALSILICONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | |||
NPNEPITAXIALSILICONDARLINGTONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | |||
NPNEPITAXIALSILICONTRANSISTOR 文件:189.65 Kbytes Page:4 Pages | UTCUnisonic Technologies 友順友順科技股份有限公司 | |||
CustomerSpecification Construction Diameters(In) 1)Component18X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.010Wall,Nom.PVC,SemiRigid0.047 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8Componen | ALPHAWIREAlpha Wire 阿爾法電線 |
TIP112產(chǎn)品屬性
- 類型
描述
- 型號
TIP112
- 功能描述
達(dá)林頓晶體管 NPN Power Darlington
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶體管極性
NPN 集電極—發(fā)射極最大電壓
- VCEO
50 V 發(fā)射極 - 基極電壓
- VEBO
集電極—基極電壓
- 最大直流電集電極電流
0.5 A
- 最大工作溫度
+ 150 C
- 安裝風(fēng)格
SMD/SMT
- 封裝/箱體
SOIC-18
- 封裝
Reel
IC供應(yīng)商 | 芯片型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST(意法半導(dǎo)體) |
24+ |
TO-220 |
942 |
原廠訂貨渠道,支持BOM配單一站式服務(wù) |
|||
ST |
24+ |
TO-220 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
|||
STM |
24+/25+ |
TO-220AB |
400 |
原裝正品現(xiàn)貨庫存價優(yōu) |
|||
SMG |
06+ |
原廠原裝 |
13451 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
|||
ST/意法 |
25+ |
TO-220 |
45000 |
ST/意法全新現(xiàn)貨TIP112即刻詢購立享優(yōu)惠#長期有排單訂 |
|||
ST |
1738+ |
TO-220 |
8529 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
|||
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費送樣 |
|||
ST |
25+ |
TOP220 |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售! |
|||
ST |
23+ |
TO220 |
9526 |
||||
ON/ST |
2023+ |
TO-220 |
5800 |
進(jìn)口原裝,現(xiàn)貨熱賣 |
TIP112規(guī)格書下載地址
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2013-2-6
DdatasheetPDF頁碼索引
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