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型號(hào) | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
---|---|---|---|---|
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceONresistance:RDS(ON)=17m?(typ.) ?Highforwardtransferadmittance:|Yfs|=16S(typ.) ?Lowleakagecurrent:IDSS=?10μA(ma | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
P-Channel40V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?100RgTested ?100UISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitch ?POL | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | |||
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIV) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceONresistance:RDS(ON)=8.1m?(typ.) ?Highforwardtransferadmittance:|Yfs|=23S(typ.) ?Lowleakagecurrent:IDSS=?10μA( | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
FieldEffectTransistorSiliconPChannelMOSType(U-MOSIII) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceONresistance:RDS(ON)=5.0m?(typ.) ?Highforwardtransferadmittance:|Yfs|=31S(typ.) ?Lowleakagecurrent:IDS | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIV) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceONresistance:RDS(ON)=8m?(typ.) ?Highforwardtransferadmittance:|Yfs|=23S(typ.) ?Lowleakagecurrent:IDSS=?10μA(max | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIV) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceONresistance:RDS(ON)=3.1m?(typ.) ?Highforwardtransferadmittance:|Yfs|=47S(typ.) ?Lowleakagecurrent:IDSS=?10μA( | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
FIELDEFFECTTRANSISTORSILICONPCHANNELMOSTYPE(U-MOSIV) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceONresistance:RDS(ON)=6.5m?(typ.) ?Highforwardtransferadmittance:|Yfs|=40S(typ.) ?Lowleakagecurrent:IDSS=?10μA(m | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
HighEfficiencyDC竊?CConverterApplications HighEfficiencyDC/DCConverterApplications NotebookPCApplications PortableEquipmentApplications CCFLInverterApplications ?Smallfootprintduetoasmallandthinpackage ?Highspeedswitching ?Smallgatecharge:QSW=9.7nC(typ.) ?Lowdrain-sourceON-res | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
FieldEffectTransistorSiliconPChannelMOSType(U-MOS?? LithiumIonBatteryApplications NotebookPCApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceON-resistance:RDS(ON)=3.0mΩ(typ.) ?Highforwardtransferadmittance:|Yfs|=54S(typ.) ?Lowleakagecurrent:IDSS=?10μA(max)(VDS=?30V) ?Enhance | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
FieldEffectTransistorSiliconPChannelMOSType(U-MOS?? NotebookPCApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceON-resistance:RDS(ON)=5.5mΩ(typ.) ?Highforwardtransferadmittance:|Yfs|=36S(typ.) ?Lowleakagecurrent:IDSS=?10μA(max)(VDS=?30V) ?Enhancementmode:Vth=?0.8to?2.0V(VDS=? | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
FieldEffectTransistorSiliconPChannelMOSType(U-MOSV) Lithium-IonBatteryApplications LoadswitchApplications NotebookPCApplications ?Smallfootprintduetoasmallandthinpackage ?Lowdrain-sourceON-resistance:RDS(ON)=10m?(typ.) ?Highforwardtransferadmittance:|Yfs|=24S(typ.) ?Lowleakagecurrent:IDSS | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:267.49 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:267.49 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:271.99 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
P-Channel30-V(D-S)MOSFET 文件:994.81 Kbytes Page:9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:271.99 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
LithiumIonApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:281 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
LithiumIonApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:281 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:272.05 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:272.05 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:285.07 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:285.07 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:276.88 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:276.88 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | |||
P-Channel40V(D-S)MOSFET 文件:1.024839 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | |||
efficientandcost-effectivesolutiontowearproblemsontheshaft. ?DESCRIPTION TheBECA810profileisa standardstainlesssteelsleeve. ?APPLICATIONS Hubs Pinions Differentials Gearboxes Crankshafts ?DESCRIPTION TheBECA811profileisa premiumstainlesssteelsleeve withahardchrometreatment. ?APPLICATIONS Hubs Pinions Different | FRANCEJOINT France Joint | |||
SLEEKANDSLIM,WITHSOFTLYROUNDEDCORNERSANDGENTLYCURVEDROCKERS,NEXUSCOMBINESSUPERIORQUALITYWITHSTUNNINGGOODLOOKSANDEASYINSTALLATION. 10AXPLATESWITCHES 20ASWITCHES 45ASWITCHES 13AMPSOCKETOUTLETS ROUNDPINSOCKETOUTLETS 13AMPFUSEDCONNECTIONUNITS 13AMPFUSEDCONNECTIONUNITSWITHFLEXOUTLET 25AMPFLEXOUTLETPLATE SHAVERSOCKET CO-AXIAL,SATELLITEANDTRIPLEXOUTLETS TELEPHONE&DATAOUTLETS DIMMERS SURF | BG BG Electrical | |||
CartridgeFuseHoldersEnclosedFuseholders>CircuitBoardMounted 文件:913.17 Kbytes Page:2 Pages | Littelfuselittelfuse 力特力特公司 | |||
Mill-MaxSpring-loadedConnectorsMinimizeNoise 文件:2.45329 Mbytes Page:11 Pages | MILL-MAX Mill-Max Manufacturing Corp. | |||
PCMount,Shocksafe5x20mm/6.3x32mmFuses 文件:81.73 Kbytes Page:1 Pages | Littelfuselittelfuse 力特力特公司 |
TPC811產(chǎn)品屬性
- 類型
描述
- 型號(hào)
TPC811
- 制造商
TOSHIBA
- 制造商全稱
Toshiba Semiconductor
- 功能描述
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
TOSHIBA/東芝 |
20+ |
SOP8 |
35830 |
原裝優(yōu)勢主營型號(hào)-可開原型號(hào)增稅票 |
|||
TOSHIBA |
21+ |
SOP-8 |
10000 |
只做原裝,質(zhì)量保證 |
|||
TOSHIBA/東芝 |
23+ |
SOP8 |
50000 |
只做原裝正品 |
|||
TOS |
23+ |
SOP |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
|||
TOSHIBA |
24+ |
SOP-8 |
6000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
|||
TOSHIBA |
2511 |
SOP-8 |
12800 |
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價(jià) |
|||
TOSHIBA/東芝 |
24+ |
SMD8 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實(shí)單! |
|||
TOSHIBA |
24+ |
SOP8 |
2568 |
原裝優(yōu)勢!絕對(duì)公司現(xiàn)貨 |
|||
TOSHIBA |
24+ |
SOP-8 |
6000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
|||
TOS |
24+ |
SOP |
7500 |
十年品牌!原裝現(xiàn)貨!!! |
TPC811規(guī)格書下載地址
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- TPC8042
- TPC8041
- TPC8030
- TPC8029
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- TPC8027
- TPC8026
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- TPC8014
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DdatasheetPDF頁碼索引
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