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位置:首頁 > IC中文資料第4389頁 > TSM1N60SCT
型號 | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
---|---|---|---|---|
TSM1N60SCT | 600VN-ChannelPowerMOSFET 文件:371.46 Kbytes Page:6 Pages | TSCTaiwan Semiconductor Company, Ltd 臺灣半導體臺灣半導體股份有限公司 | ||
N-ChannelPowerEnhancementModeMOSFET GeneralDescription TheTSM1N60Sisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergye | TSCTaiwan Semiconductor Company, Ltd 臺灣半導體臺灣半導體股份有限公司 | |||
N-ChannelPowerEnhancementModeMOSFET GeneralDescription TheTSM1N60Sisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergye | TSCTaiwan Semiconductor Company, Ltd 臺灣半導體臺灣半導體股份有限公司 | |||
600VN-ChannelPowerMOSFET 文件:381.92 Kbytes Page:8 Pages | TSCTaiwan Semiconductor Company, Ltd 臺灣半導體臺灣半導體股份有限公司 | |||
600VN-ChannelPowerMOSFET 文件:381.92 Kbytes Page:8 Pages | TSCTaiwan Semiconductor Company, Ltd 臺灣半導體臺灣半導體股份有限公司 | |||
GOLDBONDEDGERMANIUMDIODE GermaniumGlassDiode Features ?GermaniumGlassDiode ?RoHSCompliance | ETCList of Unclassifed Manufacturers 未分類制造商 | |||
SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors FEATURES ?Hermeticallysealed ?Breakdownvoltagerange6.8-200volts ?Glasspassivatedjunction ?Excellentclampingcapability ?Lowzenerimpedance ?100surgetested ?-55°Cto+150°C ?Bi-directional MAXIMUMRATING ?PeakPulsePower(Ppk):15000Watts(10x1000μs)@25°C(seedi | Littelfuselittelfuse 力特力特公司 | |||
SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar | FORMOSAFormosa MS 美麗微半導體美麗微半導體股份有限公司 | |||
JEDECDO-7PACKAGE JEDECDO-7PACKAGE | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | |||
1.2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow | UTCUnisonic Technologies 友順友順科技股份有限公司 |
TSM1N60SCT產(chǎn)品屬性
- 類型
描述
- 型號
TSM1N60SCT
- 功能描述
MOSFET 600V 1A N channel MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶體管極性
N-Channel
- 汲極/源極擊穿電壓
650 V
- 閘/源擊穿電壓
25 V
- 漏極連續(xù)電流
130 A 電阻汲極/源極
- RDS(導通)
0.014 Ohms
- 配置
Single
- 安裝風格
Through Hole
- 封裝/箱體
Max247
- 封裝
Tube
IC供應商 | 芯片型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TSC/臺灣半導體 |
22+ |
TO-92 |
100000 |
代理渠道/只做原裝/可含稅 |
|||
TSC/臺灣半導體 |
24+ |
NA/ |
4200 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
|||
TSC |
1715+ |
SOP |
251156 |
只做原裝正品現(xiàn)貨假一賠十! |
|||
TSC |
18+ |
TO-92 |
950 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
|||
TSC |
25+ |
TO-92 |
950 |
只做原裝進口!正品支持實單! |
|||
TSC/臺灣半導體 |
2022+ |
SOT-223 |
30000 |
進口原裝現(xiàn)貨供應,原裝 假一罰十 |
|||
TSC/臺灣半導體 |
20+ |
SOT-223 |
32500 |
現(xiàn)貨很近!原廠很遠!只做原裝 |
|||
NK/南科功率 |
2025+ |
SOT-223 |
986966 |
國產(chǎn) |
|||
TSC/臺灣半導體 |
2022+ |
SOT-223 |
32500 |
原廠代理 終端免費提供樣品 |
|||
TSC |
21+ |
TO-92 |
950 |
原裝現(xiàn)貨假一賠十 |
TSM1N60SCT規(guī)格書下載地址
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TSM1N60SCT數(shù)據(jù)表相關新聞
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TSM2N7002KCXRFG
2022-7-19TSM9428DCS RL
TSM9428DCSRL
2021-11-26TSM1A473F39H1RZ
TSM1A473F39H1RZ,當天發(fā)貨0755-82732291全新原裝現(xiàn)貨或門市自取.
2020-10-6TSM2A103F3951RZ
TSM2A103F3951RZ,全新原裝當天發(fā)貨或門市自取0755-82732291.
2020-3-12TSM1A473F39H1RZ
TSM1A473F39H1RZ,全新原裝當天發(fā)貨或門市自取0755-82732291.
2019-9-29TSM1A104F4051
TSM1A104F4051,全新原裝當天發(fā)貨或門市自取0755-82732291.
2019-9-29
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